发明授权
US07915666B2 Nonvolatile semiconductor memory devices with charge injection corner
有权
具有电荷注入角的非易失性半导体存储器件
- 专利标题: Nonvolatile semiconductor memory devices with charge injection corner
- 专利标题(中): 具有电荷注入角的非易失性半导体存储器件
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申请号: US12124143申请日: 2008-05-20
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公开(公告)号: US07915666B2公开(公告)日: 2011-03-29
- 发明人: Kan Yasui , Tetsuya Ishimaru , Digh Hisamoto , Yasuhiro Shimamoto
- 申请人: Kan Yasui , Tetsuya Ishimaru , Digh Hisamoto , Yasuhiro Shimamoto
- 申请人地址: JP Kawasaki-shi
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kawasaki-shi
- 代理机构: Miles & Stockbridge P.C.
- 优先权: JP2007-134085 20070521
- 主分类号: H01L29/792
- IPC分类号: H01L29/792
摘要:
An erase method where a corner portion on which an electric field concentrates locally is provided on the memory gate electrode, and charges in the memory gate electrode are injected into a charge trap film in a gate dielectric with Fowler-Nordheim tunneling operation is used. Since current consumption at the time of erase can be reduced by the Fowler-Nordheim tunneling, a power supply circuit area of a memory module can be reduced. Since write disturb resistance can be improved, a memory array area can be reduced by adopting a simpler memory array configuration. Owing to both the effects, an area of the memory module can be largely reduced, so that manufacturing cost can be reduced. Further, since charge injection centers of write and erase coincide with each other, so that (program and erase) endurance is improved.