发明授权
- 专利标题： Phase change memory element with a peripheral connection to a thin film electrode
- 专利标题（中）： 具有与薄膜电极的周边连接的相变存储元件
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申请号： US12492618申请日： 2009-06-26
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公开(公告)号： US07923712B2公开(公告)日： 2011-04-12
- 发明人: John Christopher Arnold , Lawrence Alfred Clevenger , Timothy Joseph Dalton , Michael Christopher Gaidis , Louis L. Hsu , Carl John Radens , Keith Kwong Hon Wong , Chih-Chao Yang
- 申请人： John Christopher Arnold , Lawrence Alfred Clevenger , Timothy Joseph Dalton , Michael Christopher Gaidis , Louis L. Hsu , Carl John Radens , Keith Kwong Hon Wong , Chih-Chao Yang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Graham S. Jones, II; Daniel P. Morris; Robert M. Trepp
- 主分类号： H01L29/02
- IPC分类号： H01L29/02
摘要：
A PCM cell structure comprises a first electrode, a phase change element, and a second electrode, wherein the phase change element is inserted in between the first electrode and the second electrode and only the peripheral edge of the first electrode contacts the phase change element thereby reducing the contact area between the phase change element and the first electrode and thereby increasing the current density through the phase change element and effectively inducing the phase change at lower levels of current and reduced programming power.