发明授权
US07927959B2 Method of patterning a metal on a vertical sidewall of an excavated feature, method of forming an embedded MIM capacitor using same, and embedded memory device produced thereby
有权
在挖掘特征的垂直侧壁上图案化金属的方法，使用其形成嵌入式MIM电容器的方法以及由此产生的嵌入式存储器件
- 专利标题： Method of patterning a metal on a vertical sidewall of an excavated feature, method of forming an embedded MIM capacitor using same, and embedded memory device produced thereby
- 专利标题（中）： 在挖掘特征的垂直侧壁上图案化金属的方法，使用其形成嵌入式MIM电容器的方法以及由此产生的嵌入式存储器件
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申请号： US12286338申请日： 2008-09-30
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公开(公告)号： US07927959B2公开(公告)日： 2011-04-19
- 发明人: Steven J. Keating , Nick Lindert , Nadia Rahhal-Orabi , Brian Doyle , Satyarth Suri , Swaminathan Sivakumar , Lana Jong , Lin Sha
- 申请人： Steven J. Keating , Nick Lindert , Nadia Rahhal-Orabi , Brian Doyle , Satyarth Suri , Swaminathan Sivakumar , Lana Jong , Lin Sha
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 Kenneth A. Nelson
- 主分类号： H01L21/467
- IPC分类号： H01L21/467
摘要：
A method of patterning a metal (141, 341, 841) on a vertical sidewall (132, 332, 832) of an excavated feature (130, 330, 830) includes placing a material (350) in the excavated feature such that a portion (435) of the metal is exposed in the excavated feature above the material, etching the exposed portion of the metal away from the vertical sidewall using a first wet etch chemistry, and removing the material from the excavated feature by etching it away using a second wet etch chemistry. The described method may be used to produce a MIM capacitor (800) suitable for an eDRAM device.