发明授权
US07943987B2 Semiconductor component with a drift zone and a drift control zone
有权
具有漂移区和漂移控制区的半导体元件
- 专利标题： Semiconductor component with a drift zone and a drift control zone
- 专利标题（中）： 具有漂移区和漂移控制区的半导体元件
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申请号： US11874591申请日： 2007-10-18
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公开(公告)号： US07943987B2公开(公告)日： 2011-05-17
- 发明人: Armin Willmeroth , Anton Mauder , Franz Hirler , Stefan Sedlmaier , Frank Pfirsch
- 申请人： Armin Willmeroth , Anton Mauder , Franz Hirler , Stefan Sedlmaier , Frank Pfirsch
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria AG
- 当前专利权人： Infineon Technologies Austria AG
- 当前专利权人地址： AT Villach
- 代理机构： Dicke, Billig & Czaja, PLLC
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要：
A semiconductor component has a drift zone and a drift control zone, a drift control zone dielectric, which is arranged in sections between the drift zone and the drift control zone, and has a first and a second connection zone, which are doped complementarily with respect to one another and which form a pn junction between the drift control zone and a section of the drift zone.