公开(公告)号：US08461648B2

公开(公告)日：2013-06-11

申请号：US11996906

申请日：2006-07-27

申请人： Frank Pfirsch ,  Anton Mauder ,  Armin Willmeroth ,  Hans-Joachim Schulze ,  Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Arunjai Mittal

发明人： Frank Pfirsch ,  Anton Mauder ,  Armin Willmeroth ,  Hans-Joachim Schulze ,  Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Arunjai Mittal

IPC分类号： H01L29/732

CPC分类号： H01L29/7803 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4916 ,  H01L29/66734 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872

摘要： A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.

公开(公告)号：US20070108513A1

公开(公告)日：2007-05-17

申请号：US11540922

申请日：2006-09-29

申请人： Michael Rub ,  Herbert Schafer ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier ,  Roland Rupp ,  Manfred Pippan ,  Hans Weber ,  Frank Pfirsch ,  Franz Hirler ,  Hans-Joachim Schulze

发明人： Michael Rub ,  Herbert Schafer ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier ,  Roland Rupp ,  Manfred Pippan ,  Hans Weber ,  Frank Pfirsch ,  Franz Hirler ,  Hans-Joachim Schulze

IPC分类号： H01L31/00

CPC分类号： H01L29/7813 ,  H01L21/76224 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/66734 ,  H01L29/7804 ,  H01L29/7849

摘要： The fabrication of a semiconductor component having a semiconductor body in which is arranged a very thin dielectric layer having sections which run in the vertical direction and which extend very deeply into the semiconductor body is disclosed. In one method a trench is formed in a drift zone region proceeding from the front side of a semiconductor body, a sacrificial layer is produced on at least a portion of the sidewalls of the trench and at least a portion of the trench is filled with a semiconductor material which is chosen such that the quotient of the net dopant charge of the semiconductor material in the trench and the total area of the sacrificial layer on the sidewalls of the trench between the semiconductor material and the drift zone region is less than the breakdown charge of the semiconductor material, and the sacrificial layer is replaced with a dielectric.

摘要翻译： 公开了具有半导体主体的半导体部件的制造，其中布置有具有在垂直方向上延伸并且非常深地延伸到半导体本体中的截面的非常薄的电介质层。 在一种方法中，在从半导体主体的前侧开始的漂移区域中形成沟槽，在沟槽的至少一部分侧壁上产生牺牲层，并且沟槽的至少一部分填充有 半导体材料被选择为使得沟槽中的半导体材料的净掺杂剂电荷的商和半导体材料和漂移区域之间的沟槽的侧壁上的牺牲层的总面积小于击穿电荷 的半导体材料，并且牺牲层被电介质代替。

公开(公告)号：US07943987B2

公开(公告)日：2011-05-17

申请号：US11874591

申请日：2007-10-18

申请人： Armin Willmeroth ,  Anton Mauder ,  Franz Hirler ,  Stefan Sedlmaier ,  Frank Pfirsch

发明人： Armin Willmeroth ,  Anton Mauder ,  Franz Hirler ,  Stefan Sedlmaier ,  Frank Pfirsch

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/7804

摘要： A semiconductor component has a drift zone and a drift control zone, a drift control zone dielectric, which is arranged in sections between the drift zone and the drift control zone, and has a first and a second connection zone, which are doped complementarily with respect to one another and which form a pn junction between the drift control zone and a section of the drift zone.

摘要翻译： 半导体部件具有漂移区和漂移控制区，漂移控制区电介质，其布置在漂移区和漂移控制区之间的部分中，并且具有第一和第二连接区，其相互掺杂互补 并且在漂移控制区域和漂移区段的一部分之间形成pn结。

公开(公告)号：US20090218621A1

公开(公告)日：2009-09-03

申请号：US11996906

申请日：2006-07-27

申请人： Frank Pfirsch ,  Anton Mauder ,  Armin Willmeroth ,  Hans-Joachim Schulze ,  Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Arunjai Mittal

发明人： Frank Pfirsch ,  Anton Mauder ,  Armin Willmeroth ,  Hans-Joachim Schulze ,  Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Arunjai Mittal

IPC分类号： H01L29/78 ,  H01L27/06 ,  H01L29/739

CPC分类号： H01L29/7803 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4916 ,  H01L29/66734 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872

摘要： A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.

摘要翻译： 具有漂移区域和漂移控制区域的半导体部件。 一个实施例包括半导体本体中具有第一导电类型的漂移区的半导体本体。 由半导体材料组成的漂移控制区域至少部分地布置成与半导体本体中的漂移区域相邻。 在漂移区域和漂移控制区域之间布置积累电介质。

公开(公告)号：US07459365B2

公开(公告)日：2008-12-02

申请号：US11540922

申请日：2006-09-29

申请人： Michael Rüb ,  Herbert Schäfer ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier ,  Roland Rupp ,  Manfred Pippan ,  Hans Weber ,  Frank Pfirsch ,  Franz Hirler ,  Hans-Joachim Schulze

发明人： Michael Rüb ,  Herbert Schäfer ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier ,  Roland Rupp ,  Manfred Pippan ,  Hans Weber ,  Frank Pfirsch ,  Franz Hirler ,  Hans-Joachim Schulze

IPC分类号： H01L21/336

CPC分类号： H01L29/7813 ,  H01L21/76224 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/66734 ,  H01L29/7804 ,  H01L29/7849

摘要： The fabrication of a semiconductor component having a semiconductor body in which is arranged a very thin dielectric layer having sections which run in the vertical direction and which extend very deeply into the semiconductor body is disclosed. In one method a trench is formed in a drift zone region proceeding from the front side of a semiconductor body, a sacrificial layer is produced on at least a portion of the sidewalls of the trench and at least a portion of the trench is filled with a semiconductor material which is chosen such that the quotient of the net dopant charge of the semiconductor material in the trench and the total area of the sacrificial layer on the sidewalls of the trench between the semiconductor material and the drift zone region is less than the breakdown charge of the semiconductor material, and the sacrificial layer is replaced with a dielectric.

摘要翻译： 公开了具有半导体主体的半导体部件的制造，其中布置有具有在垂直方向上延伸并且非常深地延伸到半导体本体中的截面的非常薄的电介质层。 在一种方法中，在从半导体主体的前侧开始的漂移区域中形成沟槽，在沟槽的至少一部分侧壁上产生牺牲层，并且沟槽的至少一部分填充有 半导体材料被选择为使得沟槽中的半导体材料的净掺杂剂电荷的商和半导体材料和漂移区域之间的沟槽的侧壁上的牺牲层的总面积小于击穿电荷 的半导体材料，并且牺牲层被电介质代替。

公开(公告)号：US20090130806A1

公开(公告)日：2009-05-21

申请号：US12350776

申请日：2009-01-08

申请人： Stefan Sedlmaier ,  Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Armin Willmeroth ,  Frank Pfirsch

发明人： Stefan Sedlmaier ,  Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Armin Willmeroth ,  Frank Pfirsch

IPC分类号： H01L21/336

CPC分类号： H01L29/7811 ,  H01L21/2205 ,  H01L21/2252 ,  H01L21/2255 ,  H01L23/291 ,  H01L23/298 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/1095 ,  H01L29/1604 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component with charge compensation structure has a semiconductor body having a drift path between two electrodes. The drift path has drift zones of a first conduction type, which provide a current path between the electrodes in the drift path, while charge compensation zones of a complementary conduction type constrict the current path of the drift path. For this purpose, the drift path has two alternately arranged, epitaxially grown diffusion zone types, the first drift zone type having monocrystalline semiconductor material on a monocrystalline substrate, and a second drift zone type having monocrystalline semiconductor material in a trench structure, with complementarily doped walls, the complementarily doped walls forming the charge compensation zones.

摘要翻译： 具有电荷补偿结构的半导体部件具有在两个电极之间具有漂移路径的半导体本体。 漂移路径具有第一导电类型的漂移区域，其在漂移路径中的电极之间提供电流路径，而互补导电类型的电荷补偿区域限制漂移路径的电流路径。 为此，漂移路径具有两个交替布置的外延生长的扩散区类型，第一漂移区类型在单晶衬底上具有单晶半导体材料，以及在沟槽结构中具有单晶半导体材料的第二漂移区类型，具有互补掺杂 壁，形成电荷补偿区的互补掺杂壁。

公开(公告)号：US07709891B2

公开(公告)日：2010-05-04

申请号：US12019271

申请日：2008-01-24

申请人： Anton Mauder ,  Stefan Sedlmaier ,  Franz Hirler ,  Armin Willmeroth ,  Gerhard Noebauer

发明人： Anton Mauder ,  Stefan Sedlmaier ,  Franz Hirler ,  Armin Willmeroth ,  Gerhard Noebauer

IPC分类号： H01L29/76

CPC分类号： H01L29/7813 ,  H01L29/0653 ,  H01L29/407 ,  H01L29/7803 ,  H01L29/7831 ,  H03K17/04206 ,  H03K17/063 ,  H03K17/567

摘要： A component arrangement. One embodiment includes a power semiconductor component having a drift zone arranged between a first and a second component zone. A drift control zone is arranged adjacent to the drift zone and is dielectrically insulated from the drift zone by a dielectric layer. A capacitive storage arrangement is coupled to the drift control zone. A charging circuit is coupled between the first component zone and the capacitive storage arrangement.

摘要翻译： 组件安排。 一个实施例包括具有布置在第一和第二组件区之间的漂移区的功率半导体组件。 漂移控制区域布置成与漂移区相邻并且通过介电层与漂移区介电绝缘。 电容存储装置耦合到漂移控制区。 充电电路耦合在第一组件区域和电容存储装置之间。

公开(公告)号：US20080265320A1

公开(公告)日：2008-10-30

申请号：US12019271

申请日：2008-01-24

申请人： Anton Mauder ,  Stefan Sedlmaier ,  Franz Hirler ,  Armin Willmeroth ,  Gerhard Noebauer

发明人： Anton Mauder ,  Stefan Sedlmaier ,  Franz Hirler ,  Armin Willmeroth ,  Gerhard Noebauer

IPC分类号： H01L29/06

CPC分类号： H01L29/7813 ,  H01L29/0653 ,  H01L29/407 ,  H01L29/7803 ,  H01L29/7831 ,  H03K17/04206 ,  H03K17/063 ,  H03K17/567

摘要： A component arrangement including a MOS transistor having a field electrode is disclosed. One embodiment includes a gate electrode, a drift zone and a field electrode, arranged adjacent to the drift zone and dielectrically insulated from the drift zone by a dielectric layer a charging circuit, having a rectifier element connected between the gate electrode and the field electrode.

摘要翻译： 公开了一种包括具有场电极的MOS晶体管的部件布置。 一个实施例包括栅极，漂移区和场电极，其布置成与漂移区相邻并且通过介电层与漂移区介电绝缘，该充电电路具有连接在栅电极和场电极之间的整流元件。

公开(公告)号：US20080197380A1

公开(公告)日：2008-08-21

申请号：US11706860

申请日：2007-02-15

申请人： Stefan Sedlmaier ,  Anton Mauder ,  Armin Willmeroth ,  Franz Hirler

发明人： Stefan Sedlmaier ,  Anton Mauder ,  Armin Willmeroth ,  Franz Hirler

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7804

摘要： A semiconductor component is disclosed herein comprising a drift zone and a drift control zone. The drift control zone is arranged adjacent to the drift zone and is dielectrically insulated from the drift zone by a dielectric layer. The drift control zone includes at least one first semiconductor layer and one second semiconductor layer. The first semiconductor layer has a higher charge carrier mobility than the second semiconductor layer.

摘要翻译： 本文公开了一种半导体元件，其包括漂移区和漂移控制区。 漂移控制区域布置成与漂移区相邻，并且通过介电层与漂移区介电绝缘。 漂移控制区包括至少一个第一半导体层和一个第二半导体层。 第一半导体层具有比第二半导体层更高的电荷载流子迁移率。

公开(公告)号：US07821033B2

公开(公告)日：2010-10-26

申请号：US11706860

申请日：2007-02-15

申请人： Stefan Sedlmaier ,  Anton Mauder ,  Armin Willmeroth ,  Franz Hirler

发明人： Stefan Sedlmaier ,  Anton Mauder ,  Armin Willmeroth ,  Franz Hirler

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7804

摘要： A semiconductor component is disclosed herein comprising a drift zone and a drift control zone. The drift control zone is arranged adjacent to the drift zone and is dielectrically insulated from the drift zone by a dielectric layer. The drift control zone includes at least one first semiconductor layer and one second semiconductor layer. The first semiconductor layer has a higher charge carrier mobility than the second semiconductor layer.

摘要翻译： 本文公开了一种半导体元件，其包括漂移区和漂移控制区。 漂移控制区域布置成与漂移区相邻，并且通过介电层与漂移区介电绝缘。 漂移控制区包括至少一个第一半导体层和一个第二半导体层。 第一半导体层具有比第二半导体层更高的电荷载流子迁移率。