发明授权
- 专利标题： Methods for oriented growth of nanowires on patterned substrates
- 专利标题（中）： 在图案化衬底上纳米线定向生长的方法
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申请号： US11641939申请日： 2006-12-20
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公开(公告)号： US07951422B2公开(公告)日： 2011-05-31
- 发明人: Yaoling Pan , Xiangfeng Duan , Robert S. Dubrow , Jay Goldman , Shahriar Mostarshed , Chunming Niu , Linda T. Romano , David P. Stumbo , Alice Fischer-Colbrie , Vijendra Sahi , Virginia Robbins
- 申请人： Yaoling Pan , Xiangfeng Duan , Robert S. Dubrow , Jay Goldman , Shahriar Mostarshed , Chunming Niu , Linda T. Romano , David P. Stumbo , Alice Fischer-Colbrie , Vijendra Sahi , Virginia Robbins
- 申请人地址： US CA Palo Alto
- 专利权人： Nanosys, Inc.
- 当前专利权人： Nanosys, Inc.
- 当前专利权人地址： US CA Palo Alto
- 代理商 Donna M. Fabian
- 主分类号： C23C16/00
- IPC分类号： C23C16/00
摘要：
The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors, as well as us of patterned substrates to grow oriented nanowires. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.
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