发明授权
- 专利标题： Self-topcoating photoresist for photolithography
- 专利标题（中）： 用于光刻的自表面光刻胶
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申请号： US12023108申请日： 2008-01-31
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公开(公告)号： US07951524B2公开(公告)日： 2011-05-31
- 发明人: Robert Allen , Phillip Brock , Shiro Kusumoto , Yukio Nishimura , Daniel P. Sanders , Mark Steven Slezak , Ratnam Sooriyakumaran , Linda K. Sundberg , Hoa Trung , Gregory M. Wallraff
- 申请人： Robert Allen , Phillip Brock , Shiro Kusumoto , Yukio Nishimura , Daniel P. Sanders , Mark Steven Slezak , Ratnam Sooriyakumaran , Linda K. Sundberg , Hoa Trung , Gregory M. Wallraff
- 申请人地址： US NY Armonk US CA Sunnyvale
- 专利权人： International Business Machines Corporation,JSR Micro Inc.
- 当前专利权人： International Business Machines Corporation,JSR Micro Inc.
- 当前专利权人地址： US NY Armonk US CA Sunnyvale
- 代理机构： Schmeiser, Olsen & Watts
- 主分类号： G03F7/039
- IPC分类号： G03F7/039 ; G03F7/20 ; G03F7/30 ; G03F7/36 ; G03F7/38
摘要：
Photoresist additive polymers and photoresist formulations that can be used in immersion lithography without the use of an additional topcoat. The resist compositions include a photoresist polymer, at least one photoacid generator, a solvent; and a photoresist additive polymer. Also a method of forming using photoresist formulations including photoresist additive polymers.
公开/授权文献
- US20080193879A1 SELF-TOPCOATING PHOTORESIST FOR PHOTOLITHOGRAPHY 公开/授权日：2008-08-14
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