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    Silicon-containing film, resin composition, and pattern formation method
    4.
    发明授权
    Silicon-containing film, resin composition, and pattern formation method 有权
    含硅膜，树脂组合物和图案形成方法

    公开(公告)号：US08791020B2

    公开(公告)日：2014-07-29

    申请号：US13193555

    申请日：2011-07-28

    申请人： Takashi Mori ,  Masato Tanaka ,  Yukio Nishimura ,  Yoshikazu Yamaguchi

    发明人： Takashi Mori ,  Masato Tanaka ,  Yukio Nishimura ,  Yoshikazu Yamaguchi

    IPC分类号： H01L21/311

    CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02126 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/31144

    摘要： A pattern-forming method includes forming a silicon-containing film on a substrate, the silicon-containing film having a mass ratio of silicon atoms to carbon atoms of 2 to 12. A shape transfer target layer is formed on the silicon-containing film. A fine pattern is transferred to the shape transfer target layer using a stamper that has a fine pattern to form a resist pattern. The silicon-containing film and the substrate are dry-etched using the resist pattern as a mask to form a pattern on the substrate in nanoimprint lithography. According to another aspect of the invention, a silicon-containing film includes silicon atoms and carbon atoms. A mass ratio of silicon atoms to carbon atoms is 2 to 12. The silicon-containing film is used for a pattern-forming method employed in nanoimprint lithography.

    摘要翻译： 图案形成方法包括在基板上形成含硅膜，所述含硅膜的硅原子与碳原子的质量比为2〜12。在含硅膜上形成形状转印目标层。 使用具有精细图案的压模形成抗蚀剂图案，将精细图案转印到形状转印目标层。 使用抗蚀剂图案作为掩模对含硅膜和衬底进行干蚀刻，以在纳米压印光刻中在衬底上形成图案。 根据本发明的另一方面，含硅膜包括硅原子和碳原子。 硅原子与碳原子的质量比为2〜12。含硅膜用于纳米压印光刻中使用的图案形成方法。

    Storage apparatus and control method for storage apparatus
    5.
    发明授权
    Storage apparatus and control method for storage apparatus 有权
    存储装置的存储装置和控制方法

    公开(公告)号：US08572428B2

    公开(公告)日：2013-10-29

    申请号：US13279491

    申请日：2011-10-24

    申请人： Satoru Nishita ,  Yukio Nishimura

    发明人： Satoru Nishita ,  Yukio Nishimura

    IPC分类号： G06F11/00

    CPC分类号： G06F11/1443 ,  G06F11/10 ,  G06F11/2089 ,  H04L1/18

    摘要： A first controller stores externally input data to a memory of the first controller, reads data stored in the memory of the first controller and transmits the data to a second controller through a first controller bridge, detects a failure at the first controller bridge in transmission of the data. The second controller receives the data through a second controller bridge, writes the received data into a memory of the second controller, and determines whether the failure is caused by the first controller if a failure occurs in the memory controller and the second controller bridge. If a failure is detected in the first controller and the second controller and the failure is caused by the first controller, the first controller transmits the data causing the failure during transmission through the first controller bridge and the second controller receives the data through the second controller bridge.

    摘要翻译： 第一控制器将外部输入数据存储到第一控制器的存储器中，读取存储在第一控制器的存储器中的数据，并通过第一控制器桥将数据发送到第二控制器，在第一控制器桥传输期间检测故障 数据。 第二控制器通过第二控制器桥接器接收数据，将接收到的数据写入第二控制器的存储器，并且如果在存储器控制器和第二控制器桥中发生故障，则确定是否由第一控制器引起故障。 如果在第一控制器和第二控制器中检测到故障，并且由第一控制器引起故障，则第一控制器在通过第一控制器桥传输期间发送导致故障的数据，并且第二控制器通过第二控制器接收数据 桥。

    Composition for forming upper layer film for immersion exposure, upper layer film for immersion exposure, and method of forming photoresist pattern
    6.
    发明授权
    Composition for forming upper layer film for immersion exposure, upper layer film for immersion exposure, and method of forming photoresist pattern 有权
    用于形成用于浸渍曝光的上层膜的组合物，用于浸渍曝光的上层膜，以及形成光致抗蚀剂图案的方法

    公开(公告)号：US08431332B2

    公开(公告)日：2013-04-30

    申请号：US12680200

    申请日：2008-09-10

    申请人： Daita Kouno ,  Norihiko Sugie ,  Gouji Wakamatsu ,  Norihiro Natsume ,  Yukio Nishimura ,  Makoto Sugiura

    发明人： Daita Kouno ,  Norihiko Sugie ,  Gouji Wakamatsu ,  Norihiro Natsume ,  Yukio Nishimura ,  Makoto Sugiura

    IPC分类号： G03F7/11 ,  G03F7/09 ,  G03F7/38

    CPC分类号： G03F7/11 ,  G03F7/2041

    摘要： The object of the invention is to provide a composition for forming an upper layer film for immersion exposure capable of forming an upper layer film effectively inhibited from developing defects through an immersion exposure process, such as a watermark defect and dissolution residue defect. Also provided are an upper layer film for immersion exposure and a method of forming a resist pattern. The composition for forming an upper layer film includes a resin ingredient and a solvent. The resin ingredient includes a resin (A) having at least one kind of repeating units selected among those represented by the formulae (1-1) to (1-3) and at least either of the two kinds of repeating units represented by the formulae (2-1) and (2-2). (1-1) (1-2) (1-3) (2-1) (2-2) [In the formulae, R1 represents hydrogen or methyl; R2 and R3 each represents methylene, linear or branched C2-6 alkylene, or alicyclic C4-12 alkylene; R4 represents hydrogen or methyl; and R5 represents a single bond, methylene, or linear or branched C2-6 alkylene.].

    摘要翻译： 本发明的目的是提供一种用于形成用于浸渍曝光的上层膜的组合物，其能够通过诸如水印缺陷和溶解残留缺陷的浸渍曝光工艺有效地防止显影缺陷的形成。 还提供了用于浸渍曝光的上层膜和形成抗蚀剂图案的方法。 用于形成上层膜的组合物包括树脂成分和溶剂。 树脂成分包括具有选自由式（1-1）〜（1-3）表示的重复单元中的至少一种重复单元的树脂（A）和由式 （2-1）和（2-2）。 （1-1）（1-2）（1-3）（2-1）（2-2）[式中，R1表示氢或甲基; R2和R3各自表示亚甲基，直链或支链C 2-6亚烷基或脂环族C 4-12亚烷基; R4代表氢或甲基; 并且R 5表示单键，亚甲基或直链或支链C 2-6亚烷基。

    UPPER LAYER FILM FORMING COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN
    7.
    发明申请
    UPPER LAYER FILM FORMING COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN 有权
    上层膜成膜组合物及形成光电子图案的方法

    公开(公告)号：US20100040974A1

    公开(公告)日：2010-02-18

    申请号：US12442377

    申请日：2007-09-21

    申请人： Daita Kouno ,  Hiromitsu Nakashima ,  Yukio Nishimura

    发明人： Daita Kouno ,  Hiromitsu Nakashima ,  Yukio Nishimura

    IPC分类号： G03F7/20 ,  G03F7/004

    CPC分类号： G03F7/0397 ,  G03F7/0046 ,  G03F7/095 ,  G03F7/11 ,  G03F7/2041 ,  H01L21/0276

    摘要： An upper layer film forming composition for forming an upper layer film on the surface of a photoresist film includes (A) a resin dissolvable in a developer for the photoresist film and (B) a compound having a sulfonic acid residue group, the composition forming an upper layer film with a receding contact angle to water of 70° or more. The upper layer film forming composition of the present invention can form an upper layer film which has a sufficient transparency and is stably maintained without eluting the components into a medium without being intermixed with a photoresist film, can form a resist pattern with high resolution while effectively suppressing a defect, and can suppress a blob defect.

    摘要翻译： 在光致抗蚀剂膜的表面上形成上层膜的上层成膜组合物包括（A）可溶于光致抗蚀剂膜的显影剂中的树脂和（B）具有磺酸残基的化合物，该组合物形成 上层膜与水的后退接触角为70°以上。 本发明的上层成膜组合物可以形成具有足够透明度且稳定保持的上层膜，而不将组分洗脱到介质中而不与光致抗蚀剂膜混合，可以有效地形成高分辨率的抗蚀剂图案 抑制缺陷，能够抑制斑点缺陷。

    COMPOSITION FOR FORMATION OF UPPER LAYER FILM, AND METHOD FOR FORMATION OF PHOTORESIST PATTERN
    8.
    发明申请
    COMPOSITION FOR FORMATION OF UPPER LAYER FILM, AND METHOD FOR FORMATION OF PHOTORESIST PATTERN 有权
    用于形成上层膜的组合物和形成光电子图案的方法

    公开(公告)号：US20100021852A1

    公开(公告)日：2010-01-28

    申请号：US12445152

    申请日：2007-10-11

    申请人： Yukio Nishimura ,  Norihiko Sugie ,  Hiromitsu Nakashima ,  Norihiro Natsume ,  Daita Kouno

    发明人： Yukio Nishimura ,  Norihiko Sugie ,  Hiromitsu Nakashima ,  Norihiro Natsume ,  Daita Kouno

    IPC分类号： G03F7/00 ,  C09D133/04

    CPC分类号： G03F7/11 ,  G03F7/2041

    摘要： A composition for formation of upper layer film, which is used for forming an upper layer film on the surface of a photoresist film and which comprises a resin (A) having a repeating unit represented by the following general formula (1-1) and not having a repeating unit represented by the following general formula (1-2), and a resin (B) having a repeating unit represented by the following general formula (1-2) and not having a repeating unit represented by the following general formula (1-1). [In the general formulas (1-1) and (1-2), R1 is hydrogen or the like; R2 is single bonds or the like; and R3 is a fluorine-substituted, linear or branched alkyl group having 1 to 12 carbon atoms, or the like.] The composition can form an upper layer film giving a sufficiently high receded contact angle.

    摘要翻译： 一种用于形成上层膜的组合物，其用于在光致抗蚀剂膜的表面上形成上层膜，并且其包含具有由以下通式（1-1）表示的重复单元的树脂（A），而不包含 具有由以下通式（1-2）表示的重复单元和具有由以下通式（1-2）表示的重复单元并且不具有由以下通式表示的重复单元的树脂（B） 1-1）。 [通式（1-1）和（1-2）中，R 1为氢等， R2是单键等; R3是具有1〜12个碳原子的氟取代的直链或支链烷基等。]组合物可以形成具有足够高的后退接触角的上层膜。

    Use of step and flash imprint lithography for direct imprinting of dielectric materials for dual damascene processing
    10.
    发明申请
    Use of step and flash imprint lithography for direct imprinting of dielectric materials for dual damascene processing 失效
    使用步进和闪光压印光刻技术直接刻印用于双镶嵌加工的介质材料

    公开(公告)号：US20060261518A1

    公开(公告)日：2006-11-23

    申请号：US11363071

    申请日：2006-02-27

    申请人： C. Willson ,  Frank Palmieri ,  Yukio Nishimura ,  Stephen Johnson ,  Michael Stewart

    发明人： C. Willson ,  Frank Palmieri ,  Yukio Nishimura ,  Stephen Johnson ,  Michael Stewart

    IPC分类号： B29C59/02 ,  B29C35/08 ,  B28B11/08

    CPC分类号： H01L21/76817 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/76807 ,  H01L21/76828

    摘要： In some embodiments, the present invention is directed to methods that involve the combination of step-and-flash imprint lithography (SFIL) with a multi-tier template to simultaneously pattern multiple levels of, for example, an integrated circuit device. In such embodiments, the imprinted material generally does not serve or act as a simple etch mask or photoresist, but rather serves as the insulation between levels and lines, i.e., as a functional dielectric material. After imprinting and a multiple step curing process, the imprinted pattern is filled with metal, as in dual damascene processing. Typically, the two printed levels will comprise a “via level,” which is used to make electrical contact with the previously patterned under-level, and a “wiring level.” The present invention provides for the direct patterning of functional materials, which represents a significant departure from the traditional approach to microelectronics manufacturing.

    摘要翻译： 在一些实施例中，本发明涉及涉及步进和快速压印光刻（SFIL）与多层模板的组合以同时对例如集成电路器件的多个级别进行图案化的方法。 在这样的实施例中，压印材料通常不起到或用作简单的蚀刻掩模或光致抗蚀剂的作用，而是用作层和线之间的绝缘，即功能介电材料。 在印迹和多步固化过程之后，印刷图案充满金属，如在双镶嵌加工中。 通常，两个印刷电平将包括用于与先前图案化的欠电平进行电接触的“通孔电平”和“接线电平”。 本发明提供了功能材料的直接图案化，其代表了与传统的微电子制造方法的显着不同。