发明授权
- 专利标题： Method of manufacturing a semiconductor device
- 专利标题（中）： 制造半导体器件的方法
-
申请号： US12165805申请日： 2008-07-01
-
公开(公告)号： US07972941B2公开(公告)日： 2011-07-05
- 发明人: Jong-Won Hong , Gil-Heyun Choi , Jong-Myeong Lee , Geum-Jung Seong
- 申请人： Jong-Won Hong , Gil-Heyun Choi , Jong-Myeong Lee , Geum-Jung Seong
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel Sibley & Sajovec, P.A.
- 优先权： KR10-2007-0066111 20070702
- 主分类号： H01L21/322
- IPC分类号： H01L21/322
摘要：
A gate structure is formed on a substrate. An insulating interlayer is formed covering the gate structure. The substrate is heat treated while exposing a surface of the insulating interlayer to a hydrogen gas atmosphere. A silicon nitride layer is formed directly on the interlayer insulating layer after the heat treatment and a metal wiring is formed on the insulating interlayer. The metal wiring may include copper. Heat treating the substrate while exposing a surface of the interlayer insulating layer to a hydrogen gas atmosphere may be preceded by forming a plug through the first insulating interlayer that contacts the substrate, and the metal wiring may be electrically connected to the plug. The plug may include tungsten.
公开/授权文献
- US20090011583A1 Method of manufacturing a semiconductor device 公开/授权日：2009-01-08