发明授权
US08026136B2 Methods of forming low hydrogen concentration charge-trapping layer structures for non-volatile memory
有权
形成用于非挥发性记忆体的低氢浓度电荷捕获层结构的方法
- 专利标题： Methods of forming low hydrogen concentration charge-trapping layer structures for non-volatile memory
- 专利标题（中）： 形成用于非挥发性记忆体的低氢浓度电荷捕获层结构的方法
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申请号： US11964322申请日： 2007-12-26
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公开(公告)号： US08026136B2公开(公告)日： 2011-09-27
- 发明人: Yen-Hao Shih , Min-Ta Wu , Shih-Chin Lee , Jung-Yu Hsieh , Erh-Kun Lai , Kuang Yeu Hsieh
- 申请人： Yen-Hao Shih , Min-Ta Wu , Shih-Chin Lee , Jung-Yu Hsieh , Erh-Kun Lai , Kuang Yeu Hsieh
- 申请人地址： TW Hsinchu
- 专利权人： MACRONIX International Co., Ltd.
- 当前专利权人： MACRONIX International Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Jianq Chyun IP Office
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/311
摘要：
Memory cells comprising: a semiconductor substrate having at least two source/drain regions separated by a channel region; a charge-trapping structure disposed above the channel region; and a gate disposed above the charge-trapping structure; wherein the charge-trapping structure comprises a bottom insulating layer, a first charge-trapping layer, and a second charge-trapping layer, wherein an interface between the bottom insulating layer and the substrate has a hydrogen concentration of less than about 3×1011/cm−2, and methods for forming such memory cells.
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