发明授权
- 专利标题: Film deposition method and film deposition apparatus of metal film
- 专利标题(中): 金属膜的成膜方法和成膜装置
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申请号: US11922918申请日: 2006-06-28
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公开(公告)号: US08029873B2公开(公告)日: 2011-10-04
- 发明人: Taro Ikeda , Yasushi Mizusawa , Tatsuo Hatano , Osamu Yokoyama , Takashi Sakuma
- 申请人: Taro Ikeda , Yasushi Mizusawa , Tatsuo Hatano , Osamu Yokoyama , Takashi Sakuma
- 申请人地址: JP Minato-Ku, Tokyo-To
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Minato-Ku, Tokyo-To
- 代理机构: Smith, Gambrell & Russell, LLP
- 优先权: JP2005-188107 20050628; JP2005-277044 20050926
- 国际申请: PCT/JP2006/312890 WO 20060628
- 国际公布: WO2007/001022 WO 20070104
- 主分类号: H05H1/24
- IPC分类号: H05H1/24 ; C23C16/00
摘要:
The present invention is a film deposition method of a metal film comprising the steps of: placing an object to be processed having a recess formed in a surface thereof, on a stage in a processing vessel; evacuating the processing vessel to create a vacuum therein; ionizing a metal target in the evacuated processing vessel to generate metal particles including metal ions, by means of a plasma formed by making the plasma from an inert gas; and by applying a bias electric power to the object to be processed placed on the stage to draw the plasma and the metal particles into the object to be processed, scraping a bottom part of the recess to form a scraped recess, and depositing a metal film on an entire surface of the object to be processed including surfaces in the recess and in the scraped recess.