发明授权
- 专利标题： Method of manufacturing a metal wiring structure
- 专利标题（中）： 制造金属布线结构的方法
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申请号： US12506361申请日： 2009-07-21
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公开(公告)号： US08053374B2公开(公告)日： 2011-11-08
- 发明人: Kyung-In Choi , Hyeon-Deok Lee , Gil-Heyun Choi , Jong-Myeong Lee
- 申请人： Kyung-In Choi , Hyeon-Deok Lee , Gil-Heyun Choi , Jong-Myeong Lee
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2008-0071449 20080723
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469 ; H01L21/4763
摘要：
In a method of manufacturing a metal wiring structure, a first metal wiring and a first barrier layer are formed on a substrate, and the first barrier layer is nitridated. An insulating interlayer is formed on the substrate so as to extend over the first metal wiring and the first barrier layer. Part of the insulating interlayer is removed to form a hole exposing at least part of the first metal wiring and part of the first barrier layer. A nitidation plasma treatment is performed on the exposed portion of the first barrier layer. A second barrier layer is formed along the bottom and sides of the hole. A plug is formed on the second barrier layer to fill the hole.
公开/授权文献
- US20100022086A1 METHOD OF MANUFACTURING A METAL WIRING STRUCTURE 公开/授权日：2010-01-28