Invention Grant
- Patent Title: Plasma procesor and plasma processing method
- Patent Title (中): 等离子处理和等离子体处理方法
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Application No.: US10483251Application Date: 2002-07-02
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Publication No.: US08056503B2Publication Date: 2011-11-15
- Inventor: Akihiro Kikuchi , Satoshi Kayamori , Shinya Shima , Yuichiro Sakamoto , Kimihiro Higuchi , Kaoru Oohashi , Takehiro Ueda , Munehiro Shibuya , Tadashi Gondai
- Applicant: Akihiro Kikuchi , Satoshi Kayamori , Shinya Shima , Yuichiro Sakamoto , Kimihiro Higuchi , Kaoru Oohashi , Takehiro Ueda , Munehiro Shibuya , Tadashi Gondai
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2001-210035 20010710; JP2001-216424 20010717; JP2002-068423 20020313
- International Application: PCT/JP02/06665 WO 20020702
- International Announcement: WO03/009363 WO 20030130
- Main IPC: C23C16/50
- IPC: C23C16/50 ; C23C16/52 ; C23F1/00 ; H01L21/306 ; C23C16/06 ; C23C16/22
Abstract:
An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.
Public/Granted literature
- US20040177927A1 Plasma procesor and plasma processing method Public/Granted day:2004-09-16
Information query
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