发明授权
- 专利标题： Aluminum copper oxide based memory devices and methods for manufacture
- 专利标题（中）： 基于氧化铝铜的记忆体及其制造方法
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申请号： US12332837申请日： 2008-12-11
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公开(公告)号： US08067815B2公开(公告)日： 2011-11-29
- 发明人: Wei-Chih Chien , Kuo-Pin Chang , Yi-Chou Chen , Erh-Kun Lai , Kuang-Yeu Hsieh
- 申请人： Wei-Chih Chien , Kuo-Pin Chang , Yi-Chou Chen , Erh-Kun Lai , Kuang-Yeu Hsieh
- 申请人地址： TW Hsinchu
- 专利权人： Macronix International Co., Lt.d.
- 当前专利权人： Macronix International Co., Lt.d.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Haynes Beffel & Wolfeld LLP
- 主分类号： H01L29/72
- IPC分类号： H01L29/72
摘要：
Memory devices are described along with methods for manufacturing. A memory device as described herein includes a first electrode and a second electrode. The memory device further includes a diode and an anti-fuse metal-oxide memory element comprising aluminum oxide and copper oxide. The diode and the metal-oxide memory element are arranged in electrical series between the first electrode and the second electrode.
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