Invention Grant
- Patent Title: Low-cost non-volatile flash-RAM memory
- Patent Title (中): 低成本的非易失性闪存 - RAM内存
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Application No.: US12182996Application Date: 2008-07-30
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Publication No.: US08120949B2Publication Date: 2012-02-21
- Inventor: Rajiv Yadav Ranjan , Parviz Keshtbod , Mahmud Assar
- Applicant: Rajiv Yadav Ranjan , Parviz Keshtbod , Mahmud Assar
- Applicant Address: US CA Fremont
- Assignee: Avalanche Technology, Inc.
- Current Assignee: Avalanche Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agency: IPxLAW GROUP LLP
- Agent Maryam Imam
- Main IPC: G11C11/14
- IPC: G11C11/14
Abstract:
A flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die.
Public/Granted literature
- US20090046501A1 LOW-COST NON-VOLATILE FLASH-RAM MEMORY Public/Granted day:2009-02-19
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