公开(公告)号：US20120002463A1

公开(公告)日：2012-01-05

申请号：US13235224

申请日：2011-09-16

申请人： Rajiv Yadav Ranjan ,  Mahmud Assar ,  Parviz Keshtbod

发明人： Rajiv Yadav Ranjan ,  Mahmud Assar ,  Parviz Keshtbod

IPC分类号： G11C11/14

CPC分类号： G11C11/1675 ,  B82Y10/00 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/5607 ,  G11C2211/5615 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08

摘要： A multi-state current-switching magnetic memory element includes a stack of magnetic tunneling junction (MTJ) separated by a non-magnetic layer for storing more than one bit of information, wherein different levels of current applied to the memory element cause switching to different states.

公开(公告)号：US08058696B2

公开(公告)日：2011-11-15

申请号：US11678515

申请日：2007-02-23

申请人： Rajiv Yadav Ranjan ,  Mahmud Assar ,  Parviz Keshtbod

发明人： Rajiv Yadav Ranjan ,  Mahmud Assar ,  Parviz Keshtbod

IPC分类号： H01L29/82 ,  G11C11/00

CPC分类号： G11C11/1675 ,  B82Y10/00 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/5607 ,  G11C2211/5615 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08

摘要： A multi-state current-switching magnetic memory element includes a stack of magnetic tunneling junction (MTJ) separated by a non-magnetic layer for storing more than one bit of information, wherein different levels of current applied to the memory element cause switching to different states.

摘要翻译： 多状态电流切换磁存储元件包括由用于存储多于一位的信息的非磁性层分开的磁隧道结（MTJ）堆叠，其中施加到存储元件的不同电流电平导致切换到不同的 状态。

公开(公告)号：US08477530B2

公开(公告)日：2013-07-02

申请号：US13305646

申请日：2011-11-28

申请人： Rajiv Yadav Ranjan ,  Petro Estakhri ,  Mahmud Assar ,  Parviz Keshtbod

发明人： Rajiv Yadav Ranjan ,  Petro Estakhri ,  Mahmud Assar ,  Parviz Keshtbod

IPC分类号： G11C11/14

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/08

摘要： A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current.

公开(公告)号：US08391058B2

公开(公告)日：2013-03-05

申请号：US13345600

申请日：2012-01-06

申请人： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Mahmud Assar

发明人： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Mahmud Assar

IPC分类号： G11C11/14

CPC分类号： G06F12/0246 ,  G11C11/15 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C14/00 ,  H01L27/105 ,  H01L27/224

摘要： A flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die. The non-volatile RAM is formed of stacks of magnetic memory cells arranged in three-dimensional form for higher density and lower costs.

摘要翻译： 闪存RAM存储器包括形成在单片模块上的非易失性随机存取存储器（RAM）和形成在非易失性RAM，非易失性页面模式存储器和非易失性页面模式存储器之上的非易失性页面模式存储器， 易失性RAM驻留在单片模具上。 非易失性RAM由以三维形式布置的磁存储单元堆叠形成，用于更高密度和更低成本。

公开(公告)号：US08391054B2

公开(公告)日：2013-03-05

申请号：US13235232

申请日：2011-09-16

申请人： Rajiv Yadav Ranjan ,  Mahmud Assar ,  Parviz Keshtbod

发明人： Rajiv Yadav Ranjan ,  Mahmud Assar ,  Parviz Keshtbod

IPC分类号： G11C11/00

CPC分类号： G11C11/1675 ,  B82Y10/00 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/5607 ,  G11C2211/5615 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08

摘要： A multi-state current-switching magnetic memory element includes a stack of magnetic tunneling junction (MTJ) separated by a non-magnetic layer for storing more than one bit of information, wherein different levels of current applied to the memory element cause switching to different states.

摘要翻译： 多状态电流切换磁存储元件包括由用于存储多于一位的信息的非磁性层分开的磁隧道结（MTJ）堆叠，其中施加到存储元件的不同电流电平导致切换到不同的 状态。

公开(公告)号：US20120068236A1

公开(公告)日：2012-03-22

申请号：US13305668

申请日：2011-11-28

申请人： Rajiv Yadav Ranjan ,  Petro Estakhri ,  Mahmud Assar ,  Parviz Keshtbod

发明人： Rajiv Yadav Ranjan ,  Petro Estakhri ,  Mahmud Assar ,  Parviz Keshtbod

IPC分类号： H01L29/82 ,  H01L43/12

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/08

摘要： A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current.

公开(公告)号：US08120949B2

公开(公告)日：2012-02-21

申请号：US12182996

申请日：2008-07-30

申请人： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Mahmud Assar

发明人： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Mahmud Assar

IPC分类号： G11C11/14

CPC分类号： G06F12/0246 ,  G11C11/15 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C14/00 ,  H01L27/105 ,  H01L27/224

摘要： A flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die.

摘要翻译： 闪存RAM存储器包括形成在单片模块上的非易失性随机存取存储器（RAM）和形成在非易失性RAM，非易失性页面模式存储器和非易失性页面模式存储器之上的非易失性页面模式存储器， 易失性RAM驻留在单片模具上。

公开(公告)号：US08724413B2

公开(公告)日：2014-05-13

申请号：US13235224

申请日：2011-09-16

申请人： Rajiv Yadav Ranjan ,  Mahmud Assar ,  Parviz Keshtbod

发明人： Rajiv Yadav Ranjan ,  Mahmud Assar ,  Parviz Keshtbod

IPC分类号： G11C11/16 ,  G11C7/06 ,  G11C11/02 ,  G11C11/14 ,  G11C11/15 ,  G11C7/14 ,  G11C7/08

CPC分类号： G11C11/1675 ,  B82Y10/00 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/5607 ,  G11C2211/5615 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08

摘要： A multi-state current-switching magnetic memory element includes a stack of magnetic tunneling junction (MTJ) separated by a non-magnetic layer for storing more than one bit of information, wherein different levels of current applied to the memory element cause switching to different states.

摘要翻译： 多状态电流切换磁存储元件包括由用于存储多于一位的信息的非磁性层分开的磁隧道结（MTJ）堆叠，其中施加到存储元件的不同电流电平导致切换到不同的 状态。

公开(公告)号：US08389301B2

公开(公告)日：2013-03-05

申请号：US13305668

申请日：2011-11-28

申请人： Rajiv Yadav Ranjan ,  Petro Estakhri ,  Mahmud Assar ,  Parviz Keshtbod

发明人： Rajiv Yadav Ranjan ,  Petro Estakhri ,  Mahmud Assar ,  Parviz Keshtbod

IPC分类号： H01L21/00

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/08

摘要： A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current.

摘要翻译： 非均匀开关型非易失性磁存储元件包括固定层，形成在固定层顶部上的阻挡层，形成在阻挡层顶部上的第一自由层，形成非均匀开关层（NSL） 在第一自由层的顶部和形成在不均匀开关层的顶部上的第二自由层。 在基本上垂直于固定层，阻挡层，第一自由层，不均匀的开关层和第二自由层的方向上施加开关电流，导致第一自由层，第二自由层和非自由层的状态之间的切换， 均匀的开关层，开关电流大大降低。

公开(公告)号：US20120170361A1

公开(公告)日：2012-07-05

申请号：US13345600

申请日：2012-01-06

申请人： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Mahmud ASSAR

发明人： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Mahmud ASSAR

IPC分类号： G11C11/14

CPC分类号： G06F12/0246 ,  G11C11/15 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C14/00 ,  H01L27/105 ,  H01L27/224

摘要： A flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die. The non-volatile RAM is formed of stacks of magnetic memory cells arranged in three-dimensional form for higher density and lower costs.

摘要翻译： 闪存RAM存储器包括形成在单片模块上的非易失性随机存取存储器（RAM）和形成在非易失性RAM，非易失性页面模式存储器和非易失性页面模式存储器之上的非易失性页面模式存储器， 易失性RAM驻留在单片模具上。 非易失性RAM由以三维形式布置的磁存储单元堆叠形成，用于更高密度和更低成本。