Invention Grant
- Patent Title: Systems and methods for a high density, compact memory array
- Patent Title (中): 用于高密度,紧凑型存储器阵列的系统和方法
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Application No.: US12561395Application Date: 2009-09-17
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Publication No.: US08178407B2Publication Date: 2012-05-15
- Inventor: Tzu-Hsuan Hsu , Ming-Hsiu Lee , Chao-I Wu , Ming-Chang Kuo
- Applicant: Tzu-Hsuan Hsu , Ming-Hsiu Lee , Chao-I Wu , Ming-Chang Kuo
- Applicant Address: TW
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW
- Agency: Baker & McKenzie LLP
- Main IPC: H01L21/336
- IPC: H01L21/336

Abstract:
A memory array comprising vertical memory cells does not require any isolation layers between cells. Thus, a very compact, high density memory array can be achieved. Each memory cell in the memory array is configured to store 4 bits of data per cell. Multi-level charge techniques can be used to increase the number of bit per cell and achieve further increased density for the memory array.
Public/Granted literature
- US20100009504A1 SYSTEMS AND METHODS FOR A HIGH DENSITY, COMPACT MEMORY ARRAY Public/Granted day:2010-01-14
Information query
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