High performance sensors and methods for forming the same

Invention Grant

US08187902B2 High performance sensors and methods for forming the same 有权

Title translation: 高性能传感器及其形成方法

Patent Title: High performance sensors and methods for forming the same
Patent Title (中): 高性能传感器及其形成方法
Application No.: US12170190

Application Date: 2008-07-09
Publication No.: US08187902B2

Publication Date: 2012-05-29
Inventor: Marc S. Weinberg , Mirela G. Bancu , James A. Bickford , Jonathan J. Bernstein , Richard Elliott
Applicant: Marc S. Weinberg , Mirela G. Bancu , James A. Bickford , Jonathan J. Bernstein , Richard Elliott
Applicant Address: US MA Cambridge
Assignee: The Charles Stark Draper Laboratory, Inc.
Current Assignee: The Charles Stark Draper Laboratory, Inc.
Current Assignee Address: US MA Cambridge
Agency: Goodwin Procter LLP
Main IPC: H01L21/00
IPC: H01L21/00 ; G01P15/125 ; G01C19/56

Abstract:

A sensor includes a proof mass suspended by a suspension beam, the suspension beam having a thickness less than a thickness of the proof mass.

Abstract(Chinese):

传感器包括由悬挂梁悬挂的检验质量块，悬挂梁的厚度小于检验质量块的厚度。

Public/Granted literature

Information query

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备