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发明授权
US08192592B2 Methods of forming a phase-change material layer including tellurium and methods of manufacturing a phase-change memory device using the same 有权
形成包括碲的相变材料层的方法和使用该相变材料层的相变存储器件的制造方法

Methods of forming a phase-change material layer including tellurium and methods of manufacturing a phase-change memory device using the same
摘要：
The present invention provides methods of forming a phase-change material layer including providing a substrate and a chalcogenide target including germanium (Ge), antimony (Sb) and tellurium (Te) at a temperature wherein tellurium is volatilized and antimony is not volatilized, and performing a sputtering process to form the phase-change material layer including a chalcogenide material on the substrate. Methods of manufacturing a phase-change memory device using the same are also provided.
摘要（中）：

本发明提供了形成相变材料层的方法，包括在碲被挥发并且锑不挥发的温度下提供包括锗（Ge），锑（Sb）和碲（Te）的基板和硫族化物靶，以及 进行溅射工艺以在衬底上形成包括硫族化物材料的相变材料层。 还提供了制造使用其的相变存储器件的方法。

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