发明授权
US08192592B2 Methods of forming a phase-change material layer including tellurium and methods of manufacturing a phase-change memory device using the same
有权
形成包括碲的相变材料层的方法和使用该相变材料层的相变存储器件的制造方法
- 专利标题： Methods of forming a phase-change material layer including tellurium and methods of manufacturing a phase-change memory device using the same
- 专利标题（中）： 形成包括碲的相变材料层的方法和使用该相变材料层的相变存储器件的制造方法
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申请号： US12051043申请日： 2008-03-19
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公开(公告)号： US08192592B2公开(公告)日： 2012-06-05
- 发明人: Do-Hyung Kim , Shin-Jae Kang , In-Sun Park , Hyun-Seok Lim , Gyu-Hwan Oh
- 申请人： Do-Hyung Kim , Shin-Jae Kang , In-Sun Park , Hyun-Seok Lim , Gyu-Hwan Oh
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel Sibley & Sajovec, PA
- 优先权： KR10-2007-0027395 20070321
- 主分类号： C23C14/04
- IPC分类号： C23C14/04
摘要：
The present invention provides methods of forming a phase-change material layer including providing a substrate and a chalcogenide target including germanium (Ge), antimony (Sb) and tellurium (Te) at a temperature wherein tellurium is volatilized and antimony is not volatilized, and performing a sputtering process to form the phase-change material layer including a chalcogenide material on the substrate. Methods of manufacturing a phase-change memory device using the same are also provided.