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US08193567B2 Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby 有权
用于将体积衬底上的平面和非平面CMOS晶体管和由此制成的制品集成的工艺

Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby
摘要：
A process capable of integrating both planar and non-planar transistors onto a bulk semiconductor substrate, wherein the channel of all transistors is definable over a continuous range of widths.
摘要（中）：

一种能够将平面和非平面晶体管集成到体半导体衬底上的工艺，其中所有晶体管的沟道可在连续的宽度范围内定义。

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