发明授权
- 专利标题: Cascaded cure approach to fabricate highly tensile silicon nitride films
- 专利标题(中): 级联固化方法制造高拉伸氮化硅膜
-
申请号: US11897838申请日: 2007-08-31
-
公开(公告)号: US08211510B1公开(公告)日: 2012-07-03
- 发明人: Bhadri Varadarajan , Gengwei Jiang , Sirish K. Reddy , James S. Sims
- 申请人: Bhadri Varadarajan , Gengwei Jiang , Sirish K. Reddy , James S. Sims
- 申请人地址: US CA San Jose
- 专利权人: Novellus Systems, Inc.
- 当前专利权人: Novellus Systems, Inc.
- 当前专利权人地址: US CA San Jose
- 代理机构: Weaver Austin Villeneuve & Sampson LLP
- 主分类号: B05D3/06
- IPC分类号: B05D3/06
摘要:
A highly tensile dielectric layer is generated on a heat sensitive substrate while not exceeding thermal budget constraints. Cascaded ultraviolet (UV) irradiation is used to produce highly tensile films to be used, for example, in strained NMOS transistor architectures. Successive UV radiation of equal or shorter wavelengths with variable intensity and duration selectively breaks bonds in the Si—N matrix and minimizes shrinkage and film relaxation. Higher tensile stress than a non-cascaded approach may be obtained.