公开(公告)号：US10211310B2

公开(公告)日：2019-02-19

申请号：US13494836

申请日：2012-06-12

申请人： Bhadri Varadarajan

发明人： Bhadri Varadarajan

IPC分类号： C23C16/32 ,  C23C16/50 ,  H01L21/02 ,  H01L29/49 ,  C23C16/452 ,  H01L21/768

摘要： Provided are methods and systems for providing oxygen doped silicon carbide. A layer of oxygen doped silicon carbide can be provided under process conditions that employ silicon-containing precursors that have one or more silicon-hydrogen bonds and/or silicon-silicon bonds. The silicon-containing precursors also have one or more silicon-oxygen bonds and/or silicon-carbon bonds. One or more radical species in a substantially low energy state can react with the silicon-containing precursors to form the oxygen doped silicon carbide. The one or more radical species can be formed in a remote plasma source.

公开(公告)号：US09659769B1

公开(公告)日：2017-05-23

申请号：US10972084

申请日：2004-10-22

申请人： Bhadri Varadarajan ,  Sean Chang ,  James S. Sims ,  Guangquan Lu ,  David Mordo ,  Kevin Ilcisin ,  Mandar Pandit ,  Michael Carris

发明人： Bhadri Varadarajan ,  Sean Chang ,  James S. Sims ,  Guangquan Lu ,  David Mordo ,  Kevin Ilcisin ,  Mandar Pandit ,  Michael Carris

IPC分类号： H01L21/31 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/477 ,  H01L21/26

CPC分类号： H01L21/02348 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/26 ,  H01L21/3105 ,  H01L21/477

摘要： A highly tensile dielectric layer is generated on a heat sensitive substrate while not exceeding thermal budget constraints. Ultraviolet (UV) irradiation is used to produce highly tensile films to be used, for example, in strained NMOS transistor architectures. UV curing of as-deposited PECVD silicon nitride films, for example, has been shown to produce films with stresses of at least 1.65 E10 dynes/cm2. Other dielectric capping layer film materials show similar results. In transistor implementations, the stress from a source/drain region capping layer composed of such a film is uniaxially transferred to the NMOS channel through the source-drain regions to create tensile strain in the NMOS channel.

公开(公告)号：US20130330935A1

公开(公告)日：2013-12-12

申请号：US13494836

申请日：2012-06-12

申请人： Bhadri Varadarajan

发明人： Bhadri Varadarajan

IPC分类号： H01L21/31 ,  C23C16/50 ,  C23C16/52

CPC分类号： C23C16/50 ,  C23C16/325 ,  C23C16/452 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/76831 ,  H01L21/76834 ,  H01L29/4983 ,  H01L29/4991 ,  H01L2221/1047

摘要： Provided are methods and systems for providing oxygen doped silicon carbide. A layer of oxygen doped silicon carbide can be provided under process conditions that employ silicon-containing precursors that have one or more silicon-hydrogen bonds and/or silicon-silicon bonds. The silicon-containing precursors also have one or more silicon-oxygen bonds and/or silicon-carbon bonds. One or more radical species in a substantially low energy state can react with the silicon-containing precursors to form the oxygen doped silicon carbide. The one or more radical species can be formed in a remote plasma source.

摘要翻译： 提供了用于提供氧掺杂的碳化硅的方法和系统。 可以在使用具有一个或多个硅 - 氢键和/或硅 - 硅键的含硅前体的工艺条件下提供氧掺杂碳化硅层。 含硅前体还具有一个或多个硅 - 氧键和/或硅 - 碳键。 基本上低能态的一种或多种自由基物质可以与含硅前体反应形成掺杂氧的碳化硅。 一个或多个自由基物质可以在远程等离子体源中形成。

公开(公告)号：US08512818B1

公开(公告)日：2013-08-20

申请号：US13487051

申请日：2012-06-01

申请人： Bhadri Varadarajan ,  Gengwei Jiang ,  Sirish K. Reddy ,  James S. Sims

发明人： Bhadri Varadarajan ,  Gengwei Jiang ,  Sirish K. Reddy ,  James S. Sims

IPC分类号： B05D3/06

CPC分类号： H01L21/3105 ,  C23C14/0652 ,  C23C16/345 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/0231 ,  H01L29/7843

摘要： A highly tensile dielectric layer is generated on a heat sensitive substrate while not exceeding thermal budget constraints. Cascaded ultraviolet (UV) irradiation is used to produce highly tensile films to be used, for example, in strained NMOS transistor architectures. Successive UV radiation of equal or shorter wavelengths with variable intensity and duration selectively breaks bonds in the Si—N matrix and minimizes shrinkage and film relaxation. Higher tensile stress than a non-cascaded approach may be obtained.

摘要翻译： 在热敏基材上产生高度拉伸的介电层，而不超过热预算限制。 使用级联紫外（UV）照射来产生例如在应变NMOS晶体管架构中使用的高拉伸膜。 具有可变强度和持续时间的相等或较短波长的连续紫外线辐射选择性地破坏Si-N基体中的键并使收缩和膜弛豫最小化。 可以获得比非级联方法更高的拉伸应力。

公开(公告)号：US08647993B2

公开(公告)日：2014-02-11

申请号：US13472282

申请日：2012-05-15

申请人： Adrien LaVoie ,  Bhadri Varadarajan ,  Jon Henri ,  Dennis Hausmann

发明人： Adrien LaVoie ,  Bhadri Varadarajan ,  Jon Henri ,  Dennis Hausmann

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： H01L21/02167 ,  C23C16/325 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228

摘要： Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, for example, the methods involve ultraviolet (UV) activation of vapor phase amine coreactants. The methods can be used to deposit silicon-containing films, including SiN and SiCN films, at temperatures below about 400° C.

摘要翻译： 描述了在衬底上制备包括含碳和/或含氧膜如SiCN（也称为SiNC），SiON和SiONC膜的氮化硅（SiN）材料和其它含硅膜的方法。 根据各种实施方案，所述方法涉及一种或多种反应物的电磁辐射辅助活化。 在某些实施方案中，例如，该方法涉及蒸气相胺共反应物的紫外（UV）活化。 该方法可用于在低于约400℃的温度下沉积含硅膜，包括SiN和SiCN膜。

公开(公告)号：US10037905B2

公开(公告)日：2018-07-31

申请号：US12646830

申请日：2009-12-23

申请人： Bhadri Varadarajan ,  George A. Antonelli ,  Bart van Schravendijk

发明人： Bhadri Varadarajan ,  George A. Antonelli ,  Bart van Schravendijk

IPC分类号： H01L21/67 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/768

CPC分类号： H01L21/67115 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76883

摘要： Treatment of carbon-containing low-k dielectric with UV radiation and a reducing agent enables process-induced damage repair. Also, treatment with a reducing agent and UV radiation is effective to clean a processed wafer surface by removal of metal oxide (e.g., copper oxide) and/or organic residue of CMP slurry from the planarized surface of a processed wafer with or without low-k dielectric. The methods of the invention are particularly applicable in the context of damascene processing to recover lost low-k property of a dielectric damaged during processing, either pre-metalization, post-planarization, or both, and/or provide effective post-planarization surface cleaning to improve adhesion of subsequently applied dielectric barrier and/or other layers.

公开(公告)号：US20130196516A1

公开(公告)日：2013-08-01

申请号：US13472282

申请日：2012-05-15

申请人： Adrien Lavoie ,  Bhadri Varadarajan ,  Jon Henri ,  Dennis Hausmann

发明人： Adrien Lavoie ,  Bhadri Varadarajan ,  Jon Henri ,  Dennis Hausmann

IPC分类号： H01L21/318

CPC分类号： H01L21/02167 ,  C23C16/325 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228

摘要： Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, for example, the methods involve ultraviolet (UV) activation of vapor phase amine coreactants. The methods can be used to deposit silicon-containing films, including SiN and SiCN films, at temperatures below about 400° C.

摘要翻译： 描述了在衬底上制备包括含碳和/或含氧膜如SiCN（也称为SiNC），SiON和SiONC膜的氮化硅（SiN）材料和其它含硅膜的方法。 根据各种实施方案，所述方法涉及一种或多种反应物的电磁辐射辅助活化。 在某些实施方案中，例如，该方法涉及蒸气相胺共反应物的紫外（UV）活化。 该方法可用于在低于约400℃的温度下沉积含硅膜，包括SiN和SiCN膜。

公开(公告)号：US08211510B1

公开(公告)日：2012-07-03

申请号：US11897838

申请日：2007-08-31

申请人： Bhadri Varadarajan ,  Gengwei Jiang ,  Sirish K. Reddy ,  James S. Sims

发明人： Bhadri Varadarajan ,  Gengwei Jiang ,  Sirish K. Reddy ,  James S. Sims

IPC分类号： B05D3/06

CPC分类号： H01L21/3105 ,  C23C14/0652 ,  C23C16/345 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/0231 ,  H01L29/7843

摘要： A highly tensile dielectric layer is generated on a heat sensitive substrate while not exceeding thermal budget constraints. Cascaded ultraviolet (UV) irradiation is used to produce highly tensile films to be used, for example, in strained NMOS transistor architectures. Successive UV radiation of equal or shorter wavelengths with variable intensity and duration selectively breaks bonds in the Si—N matrix and minimizes shrinkage and film relaxation. Higher tensile stress than a non-cascaded approach may be obtained.

摘要翻译： 在热敏基材上产生高度拉伸的介电层，而不超过热预算限制。 使用级联紫外（UV）照射来产生例如在应变NMOS晶体管架构中使用的高拉伸膜。 具有可变强度和持续时间的相等或较短波长的连续紫外线辐射选择性地破坏Si-N基体中的键并使收缩和膜弛豫最小化。 可以获得比非级联方法更高的拉伸应力。

公开(公告)号：US20140051262A9

公开(公告)日：2014-02-20

申请号：US13472282

申请日：2012-05-15

申请人： Adrien Lavoie ,  Bhadri Varadarajan ,  Jon Henri ,  Dennis Hausmann

发明人： Adrien Lavoie ,  Bhadri Varadarajan ,  Jon Henri ,  Dennis Hausmann

IPC分类号： H01L21/318

CPC分类号： H01L21/02167 ,  C23C16/325 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228

摘要： Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, for example, the methods involve ultraviolet (UV) activation of vapor phase amine coreactants. The methods can be used to deposit silicon-containing films, including SiN and SiCN films, at temperatures below about 400° C.

摘要翻译： 描述了在衬底上制备包括含碳和/或含氧膜如SiCN（也称为SiNC），SiON和SiONC膜的氮化硅（SiN）材料和其它含硅膜的方法。 根据各种实施方案，所述方法涉及一种或多种反应物的电磁辐射辅助活化。 在某些实施方案中，例如，该方法涉及蒸气相胺共反应物的紫外（UV）活化。 该方法可用于在低于约400℃的温度下沉积含硅膜，包括SiN和SiCN膜。

公开(公告)号：US20110111533A1

公开(公告)日：2011-05-12

申请号：US12646830

申请日：2009-12-23

申请人： Bhadri Varadarajan ,  George A. Antonelli ,  Bart van Schravendijk

发明人： Bhadri Varadarajan ,  George A. Antonelli ,  Bart van Schravendijk

IPC分类号： H01L21/02 ,  B08B3/00

CPC分类号： H01L21/67115 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76883

摘要： Treatment of carbon-containing low-k dielectric with UV radiation and a reducing agent enables process-induced damage repair. Also, treatment with a reducing agent and UV radiation is effective to clean a processed wafer surface by removal of metal oxide (e.g., copper oxide) and/or organic residue of CMP slurry from the planarized surface of a processed wafer with or without low-k dielectric. The methods of the invention are particularly applicable in the context of damascene processing to recover lost low-k property of a dielectric damaged during processing, either pre-metalization, post-planarization, or both, and/or provide effective post-planarization surface cleaning to improve adhesion of subsequently applied dielectric barrier and/or other layers.

摘要翻译： 用紫外线辐射和还原剂处理含碳低k电介质可以进行过程诱导的损伤修复。 此外，用还原剂和紫外线辐射进行处理有效地通过从具有或不具有低分子量的处理的晶片的平坦化表面除去金属氧化物（例如氧化铜）和/或CMP浆料的有机残余物来清洁经处理的晶片表面， k电介质。 本发明的方法特别适用于在镶嵌加工以恢复在加工期间损坏的电介质的损失的低k性质，即预金属化，后平面化或两者之中，和/或提供有效的后平面化表面清洁 以改善随后施加的介电阻挡层和/或其它层的粘合性。