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公开(公告)号:US08268722B2
公开(公告)日:2012-09-18
申请号:US12688154
申请日:2010-01-15
申请人: Jengyi Yu , Hui-Jung Wu , Girish Dixit , Bart van Schravendijk , Pramod Subramonium , Gengwei Jiang , George Andrew Antonelli , Jennifer O'loughlin
发明人: Jengyi Yu , Hui-Jung Wu , Girish Dixit , Bart van Schravendijk , Pramod Subramonium , Gengwei Jiang , George Andrew Antonelli , Jennifer O'loughlin
IPC分类号: H01L21/4763 , H01L29/40
CPC分类号: H01L21/76834 , H01L21/02074 , H01L21/76832 , H01L21/76849 , H01L21/76883 , H01L21/76888
摘要: Adhesive layers residing at an interface between metal lines and dielectric diffusion barrier (or etch stop) layers are used to improve electromigration performance of interconnects. Adhesion layers are formed by depositing a precursor layer of metal-containing material (e.g., material containing Al, Ti, Ca, Mg, etc.) over an exposed copper line, and converting the precursor layer to a passivated layer (e.g., nitridized layer). For example, a substrate containing exposed copper line having exposed Cu—O bonds is contacted with trimethylaluminum to form a precursor layer having Al—O bonds and Al—C bonds on copper surface. The precursor layer is then treated to remove residual organic substituents and to form Al—N, Al—H bonds or both. The treatment can include direct plasma treatment, remote plasma treatment, UV-treatment, and thermal treatment with a gas such as NH3, H2, N2, and mixtures thereof. A dielectric diffusion barrier layer is then deposited.
摘要翻译: 使用驻留在金属线和电介质扩散阻挡层(或蚀刻停止)层之间的界面处的粘合层来改善互连的电迁移性能。 通过在暴露的铜线上沉积含金属材料(例如,含有Al,Ti,Ca,Mg等的材料)的前体层,并将前体层转化为钝化层(例如,氮化层 )。 例如,含有暴露的Cu-O键的暴露的铜线的基板与三甲基铝接触以形成在铜表面上具有Al-O键和Al-C键的前体层。 然后处理前体层以除去残留的有机取代基并形成Al-N,Al-H键或两者。 处理可以包括直接等离子体处理,远程等离子体处理,UV处理和用诸如NH 3,H 2,N 2的气体及其混合物的热处理。 然后沉积介电扩散阻挡层。
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2.
公开(公告)号:US08211510B1
公开(公告)日:2012-07-03
申请号:US11897838
申请日:2007-08-31
IPC分类号: B05D3/06
CPC分类号: H01L21/3105 , C23C14/0652 , C23C16/345 , C23C16/56 , H01L21/0217 , H01L21/0231 , H01L29/7843
摘要: A highly tensile dielectric layer is generated on a heat sensitive substrate while not exceeding thermal budget constraints. Cascaded ultraviolet (UV) irradiation is used to produce highly tensile films to be used, for example, in strained NMOS transistor architectures. Successive UV radiation of equal or shorter wavelengths with variable intensity and duration selectively breaks bonds in the Si—N matrix and minimizes shrinkage and film relaxation. Higher tensile stress than a non-cascaded approach may be obtained.
摘要翻译: 在热敏基材上产生高度拉伸的介电层,而不超过热预算限制。 使用级联紫外(UV)照射来产生例如在应变NMOS晶体管架构中使用的高拉伸膜。 具有可变强度和持续时间的相等或较短波长的连续紫外线辐射选择性地破坏Si-N基体中的键并使收缩和膜弛豫最小化。 可以获得比非级联方法更高的拉伸应力。
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公开(公告)号:US08753978B2
公开(公告)日:2014-06-17
申请号:US13486272
申请日:2012-06-01
申请人: Jengyi Yu , Gengwei Jiang , Pramod Subramonium , Roey Shaviv , Hui-Jung Wu , Nagraj Shankar
发明人: Jengyi Yu , Gengwei Jiang , Pramod Subramonium , Roey Shaviv , Hui-Jung Wu , Nagraj Shankar
IPC分类号: H01L21/4763
CPC分类号: H01L21/76834 , H01L21/02068 , H01L21/28556 , H01L21/76829 , H01L21/76849 , H01L21/7685 , H01L21/76856 , H01L21/76883
摘要: Disclosed methods cap exposed surfaces of copper lines with a layer of metal or metal-containing compound combined with silicon. In some cases, the metal or metal-containing compound forms an atomic layer. In certain embodiments, the methods involve exposing the copper surface first to a metal containing precursor to form an atomic layer of adsorbed precursor or metal atoms, which may optionally be converted to an oxide, nitride, carbide, or the like by, e.g., a pinning treatment. Subsequent exposure to a silicon-containing precursor may proceed with or without metallic atoms being converted.
摘要翻译: 公开的方法是用铜与金属或含金属的化合物层与硅结合的铜线的暴露表面。 在一些情况下,金属或含金属的化合物形成原子层。 在某些实施方案中,所述方法包括首先将铜表面暴露于含金属的前体以形成吸附的前体或金属原子的原子层,其可以任选地通过例如一种或多种金属原子转化为氧化物,氮化物,碳化物等 钉扎治疗。 随后暴露于含硅前体可以进行或不转换金属原子。
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4.
公开(公告)号:US08512818B1
公开(公告)日:2013-08-20
申请号:US13487051
申请日:2012-06-01
IPC分类号: B05D3/06
CPC分类号: H01L21/3105 , C23C14/0652 , C23C16/345 , C23C16/56 , H01L21/0217 , H01L21/0231 , H01L29/7843
摘要: A highly tensile dielectric layer is generated on a heat sensitive substrate while not exceeding thermal budget constraints. Cascaded ultraviolet (UV) irradiation is used to produce highly tensile films to be used, for example, in strained NMOS transistor architectures. Successive UV radiation of equal or shorter wavelengths with variable intensity and duration selectively breaks bonds in the Si—N matrix and minimizes shrinkage and film relaxation. Higher tensile stress than a non-cascaded approach may be obtained.
摘要翻译: 在热敏基材上产生高度拉伸的介电层,而不超过热预算限制。 使用级联紫外(UV)照射来产生例如在应变NMOS晶体管架构中使用的高拉伸膜。 具有可变强度和持续时间的相等或较短波长的连续紫外线辐射选择性地破坏Si-N基体中的键并使收缩和膜弛豫最小化。 可以获得比非级联方法更高的拉伸应力。
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公开(公告)号:US20130143401A1
公开(公告)日:2013-06-06
申请号:US13486272
申请日:2012-06-01
申请人: Jengyi Yu , Gengwei Jiang , Pramod Subramonium , Roey Shaviv , Hui-Jung Wu , Nagraj Shankar
发明人: Jengyi Yu , Gengwei Jiang , Pramod Subramonium , Roey Shaviv , Hui-Jung Wu , Nagraj Shankar
IPC分类号: H01L21/768
CPC分类号: H01L21/76834 , H01L21/02068 , H01L21/28556 , H01L21/76829 , H01L21/76849 , H01L21/7685 , H01L21/76856 , H01L21/76883
摘要: Disclosed methods cap exposed surfaces of copper lines with a layer of metal or metal-containing compound combined with silicon. In some cases, the metal or metal-containing compound forms an atomic layer. In certain embodiments, the methods involve exposing the copper surface first to a metal containing precursor to form an atomic layer of adsorbed precursor or metal atoms, which may optionally be converted to an oxide, nitride, carbide, or the like by, e.g., a pinning treatment. Subsequent exposure to a silicon-containing precursor may proceed with or without metallic atoms being converted.
摘要翻译: 公开的方法是用铜与金属或含金属的化合物层与硅结合的铜线的暴露表面。 在一些情况下,金属或含金属的化合物形成原子层。 在某些实施方案中,所述方法包括首先将铜表面暴露于含金属的前体以形成吸附的前体或金属原子的原子层,其可以任选地通过例如一种或多种金属原子转化成氧化物,氮化物,碳化物等 钉扎治疗。 随后暴露于含硅前体可以进行或不转换金属原子。
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公开(公告)号:US20100308463A1
公开(公告)日:2010-12-09
申请号:US12688154
申请日:2010-01-15
申请人: Jengyi Yu , Hui-Jung Wu , Girish Dixit , Bart van Schravendijk , Pramod Subramonium , Gengwei Jiang , George Andrew Antonelli , Jennifer O'loughlin
发明人: Jengyi Yu , Hui-Jung Wu , Girish Dixit , Bart van Schravendijk , Pramod Subramonium , Gengwei Jiang , George Andrew Antonelli , Jennifer O'loughlin
IPC分类号: H01L23/52 , H01L21/768 , C23F1/08
CPC分类号: H01L21/76834 , H01L21/02074 , H01L21/76832 , H01L21/76849 , H01L21/76883 , H01L21/76888
摘要: Adhesive layers residing at an interface between metal lines and dielectric diffusion barrier (or etch stop) layers are used to improve electromigration performance of interconnects. Adhesion layers are formed by depositing a precursor layer of metal-containing material (e.g., material containing Al, Ti, Ca, Mg, etc.) over an exposed copper line, and converting the precursor layer to a passivated layer (e.g., nitridized layer). For example, a substrate containing exposed copper line having exposed Cu—O bonds is contacted with trimethylaluminum to form a precursor layer having Al—O bonds and Al—C bonds on copper surface. The precursor layer is then treated to remove residual organic substituents and to form Al—N, Al—H bonds or both. The treatment can include direct plasma treatment, remote plasma treatment, UV-treatment, and thermal treatment with a gas such as NH3, H2, N2, and mixtures thereof. A dielectric diffusion barrier layer is then deposited.
摘要翻译: 使用驻留在金属线和电介质扩散阻挡层(或蚀刻停止)层之间的界面处的粘合层来改善互连的电迁移性能。 通过在暴露的铜线上沉积含金属材料(例如,含有Al,Ti,Ca,Mg等的材料)的前体层,并将前体层转化为钝化层(例如,氮化层 )。 例如,含有暴露的Cu-O键的暴露的铜线的基板与三甲基铝接触以形成在铜表面上具有Al-O键和Al-C键的前体层。 然后处理前体层以除去残留的有机取代基并形成Al-N,Al-H键或两者。 处理可以包括直接等离子体处理,远程等离子体处理,UV处理和用诸如NH 3,H 2,N 2的气体及其混合物的热处理。 然后沉积介电扩散阻挡层。
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