Invention Grant
US08232175B2 Damascene metal-insulator-metal (MIM) device with improved scaleability
有权
大马士革金属绝缘体金属（MIM）装置，具有改进的可扩展性
- Patent Title: Damascene metal-insulator-metal (MIM) device with improved scaleability
- Patent Title (中): 大马士革金属绝缘体金属（MIM）装置，具有改进的可扩展性
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Application No.: US11521204Application Date: 2006-09-14
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Publication No.: US08232175B2Publication Date: 2012-07-31
- Inventor: Suzette K. Pangrle , Steven Avanzino , Sameer Haddad , Michael VanBuskirk , Manuj Rathor , James Xie , Kevin Song , Christie Marrian , Bryan Choo , Fei Wang , Jeffrey A. Shields
- Applicant: Suzette K. Pangrle , Steven Avanzino , Sameer Haddad , Michael VanBuskirk , Manuj Rathor , James Xie , Kevin Song , Christie Marrian , Bryan Choo , Fei Wang , Jeffrey A. Shields
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A present method of fabricating a memory device includes the steps of providing a dielectric layer, providing an opening in the dielectric layer, providing a first conductive body in the opening, providing a switching body in the opening, the first conductive body and switching body filling the opening, and providing a second conductive body over the switching body. In an alternate embodiment, a second dielectric layer is provided over the first-mentioned dielectric layer, and the switching body is provided in an opening in the second dielectric layer.
Public/Granted literature
- US20080123401A1 Damascene metal-insulator-metal (MIM) device with improved scaleability Public/Granted day:2008-05-29
Information query
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