发明授权
US08263795B2 Copper precursors for thin film deposition 有权
用于薄膜沉积的铜前体

Copper precursors for thin film deposition
摘要:
Non-fluorinated copper precursors and methods for making and using same are described herein. In certain embodiments, the copper precursors described herein may be used as precursors to deposit copper films and alloys thereof on a substrate through, for example, atomic layer deposition or chemical vapor deposition conditions.
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