发明授权
- 专利标题: Copper precursors for thin film deposition
- 专利标题(中): 用于薄膜沉积的铜前体
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申请号: US12258996申请日: 2008-10-27
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公开(公告)号: US08263795B2公开(公告)日: 2012-09-11
- 发明人: John Anthony Thomas Norman , Melanie K. Perez
- 申请人: John Anthony Thomas Norman , Melanie K. Perez
- 申请人地址: US PA Allentown
- 专利权人: Air Products and Chemicals, Inc.
- 当前专利权人: Air Products and Chemicals, Inc.
- 当前专利权人地址: US PA Allentown
- 代理商 Rosaleen P. Morris-Oskanian
- 主分类号: C07F7/10
- IPC分类号: C07F7/10 ; C07F1/08 ; C23C16/00 ; H01L29/12
摘要:
Non-fluorinated copper precursors and methods for making and using same are described herein. In certain embodiments, the copper precursors described herein may be used as precursors to deposit copper films and alloys thereof on a substrate through, for example, atomic layer deposition or chemical vapor deposition conditions.
公开/授权文献
- US20090114874A1 Copper Precursors for Thin Film Deposition 公开/授权日:2009-05-07