发明授权
US08274063B2 Composite focused ion beam device, process observation method using the same, and processing method
有权
复合聚焦离子束装置，工艺观察方法采用相同的加工方法
- 专利标题： Composite focused ion beam device, process observation method using the same, and processing method
- 专利标题（中）： 复合聚焦离子束装置，工艺观察方法采用相同的加工方法
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申请号： US12733091申请日： 2008-08-06
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公开(公告)号： US08274063B2公开(公告)日： 2012-09-25
- 发明人: Takashi Kaito , Yoshitomo Nakagawa , Junichi Tashiro , Yasuhiko Sugiyama , Toshiaki Fujii , Kazuo Aita , Takashi Ogawa
- 申请人： Takashi Kaito , Yoshitomo Nakagawa , Junichi Tashiro , Yasuhiko Sugiyama , Toshiaki Fujii , Kazuo Aita , Takashi Ogawa
- 申请人地址： JP
- 专利权人： SII NanoTechnology Inc.
- 当前专利权人： SII NanoTechnology Inc.
- 当前专利权人地址： JP
- 代理机构： Adams & Wilks
- 优先权： JP2007-207098 20070808
- 国际申请： PCT/JP2008/064123 WO 20080806
- 国际公布： WO2009/020151 WO 20090212
- 主分类号： H01J49/00
- IPC分类号： H01J49/00
摘要：
A composite focused ion beam device has a first ion beam irradiation system that irradiates a first ion beam for processing a sample and a second ion beam irradiation system that irradiates a second ion beam for processing or observing the sample. The first ion beam irradiation system has a plasma type gas ion source that generates first ions for forming the first ion beam, each of the first ions having a first mass. The second ion beam irradiation system has a gas field ion source that generates second ions for forming the second ion beam. Each of the second ions has a second mass smaller than that of the first mass.
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