发明授权
- 专利标题： Isolation trench with rounded corners for BiCMOS process
- 专利标题（中）： 用于BiCMOS工艺的带圆角的隔离槽
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申请号： US12962159申请日： 2010-12-07
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公开(公告)号： US08274131B2公开(公告)日： 2012-09-25
- 发明人: Sameer P. Pendharkar , John Lin , Philip L. Hower , Steven L. Merchant
- 申请人： Sameer P. Pendharkar , John Lin , Philip L. Hower , Steven L. Merchant
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L21/70
- IPC分类号： H01L21/70
摘要：
A semiconductor device comprising a first transistor device (130) on or in a semiconductor substrate (115) and a second transistor device (132) on or in the substrate. The device further comprises an insulating trench (200) located between the first transistor device and the second transistor device. At least one upper corner (610) of the insulating trench is a rounded corner in a lateral plane (620) of the substrate.
公开/授权文献
- US20110073955A1 ISOLATION TRENCH WITH ROUNDED CORNERS FOR BiCMOS PROCESS 公开/授权日：2011-03-31
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