发明授权
- 专利标题： Field effect transistor having nanostructure channel
- 专利标题（中）： 具有纳米结构通道的场效应晶体管
-
申请号： US13345252申请日： 2012-01-06
-
公开(公告)号： US08288236B2公开(公告)日： 2012-10-16
- 发明人: Josephine B. Chang , Michael A. Guillorn , Eric A. Joseph
- 申请人： Josephine B. Chang , Michael A. Guillorn , Eric A. Joseph
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A field effect transistor (FET) includes a drain formed of a first material, a source formed of the first material, a channel formed by a nanostructure coupling the source to the drain, and a gate formed between the source and the drain and surrounding the nanostructure.
公开/授权文献
- US20120108024A1 FIELD EFFECT TRANSISTOR HAVING NANOSTRUCTURE CHANNEL 公开/授权日：2012-05-03
信息查询
IPC分类:
