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    Silicide Micromechanical Device and Methods to Fabricate Same
    6.
    发明申请
    Silicide Micromechanical Device and Methods to Fabricate Same 有权
    硅化物微机械装置及其制造方法

    公开(公告)号：US20130020183A1

    公开(公告)日：2013-01-24

    申请号：US13625294

    申请日：2012-09-24

    申请人： Michael A. Guillorn ,  Eric A. Joseph ,  Fei Liu ,  Zhen Zhang

    发明人： Michael A. Guillorn ,  Eric A. Joseph ,  Fei Liu ,  Zhen Zhang

    IPC分类号： H01H59/00

    CPC分类号： B81C1/00666 ,  B81C1/00952 ,  H01H1/0094 ,  H01H2001/0078

    摘要： A miniaturized electro-mechanical switch includes a moveable portion having a contact configured to make, when the switch is actuated, an electrical connection between two stationary points. At least the contact is composed of a fully silicided material. A structure includes a silicon layer formed over an insulator layer and a micromechanical switch formed at least partially within the silicon layer. The micromechanical switch has a conductive structure, and where at least electrically contacting portions of the conductive structure are comprised of fully silicided material.

    摘要翻译： 小型化机电开关包括具有触点的可移动部分，该触点构造成当开关被致动时使得两个静止点之间的电连接。 至少接触由完全硅化的材料组成。 一种结构包括形成在绝缘体层上的硅层和至少部分地形成在硅层内的微机电开关。 微机械开关具有导电结构，并且其中导电结构的至少电接触部分由完全硅化材料构成。

    Silicide Micromechanical Device and Methods to Fabricate Same
    7.
    发明申请
    Silicide Micromechanical Device and Methods to Fabricate Same 有权
    硅化物微机械装置及其制造方法

    公开(公告)号：US20120318649A1

    公开(公告)日：2012-12-20

    申请号：US13164126

    申请日：2011-06-20

    申请人： Michael A. Guillorn ,  Eric A. Joseph ,  Fei Liu ,  Zhen Zhang

    发明人： Michael A. Guillorn ,  Eric A. Joseph ,  Fei Liu ,  Zhen Zhang

    IPC分类号： H01H57/00 ,  H01L21/285

    CPC分类号： B81C1/00666 ,  B81C1/00952 ,  H01H1/0094 ,  H01H2001/0078

    摘要： A method is disclosed to fabricate an electro-mechanical device such as a MEMS or NEMS switch. The method includes providing a silicon layer disposed over an insulating layer that is disposed on a silicon substrate; releasing a portion of the silicon layer from the insulating layer so that it is at least partially suspended over a cavity in the insulating layer; depositing a metal (e.g., Pt) on at least one surface of at least the released portion of the silicon layer and, using a thermal process, fully siliciding at least the released portion of the silicon layer using the deposited metal. The method eliminates silicide-induced stress to the released Si member, as the entire Si member is silicided. Furthermore no conventional wet chemical etch is used after forming the fully silicided material thereby reducing a possibility of causing corrosion of the silicide and an increase in stiction.

    摘要翻译： 公开了一种制造诸如MEMS或NEMS开关的机电装置的方法。 该方法包括提供设置在设置在硅衬底上的绝缘层上的硅层; 从所述绝缘层释放所述硅层的一部分，使得其至少部分地悬挂在所述绝缘层中的空腔上; 在至少所述硅层的释放部分的至少一个表面上沉积金属（例如Pt），并且使用热处理，使用沉积的金属至少完全硅化硅层的释放部分。 当整个Si元件被硅化时，该方法消除了对释放的Si元件的硅化物引起的应力。 此外，在形成完全硅化材料之后，也不使用常规的湿化学蚀刻，从而减少引起硅化物腐蚀和粘性增加的可能性。

    High aspect ratio and reduced undercut trench etch process for a semiconductor substrate
    8.
    发明授权
    High aspect ratio and reduced undercut trench etch process for a semiconductor substrate 有权
    用于半导体衬底的高纵横比和减少的底切沟槽蚀刻工艺

    公开(公告)号：US08652969B2

    公开(公告)日：2014-02-18

    申请号：US13281715

    申请日：2011-10-26

    申请人： Nicholas C. M. Fuller ,  Eric A. Joseph ,  Edmund M. Sikorski ,  Goh Matsuura

    发明人： Nicholas C. M. Fuller ,  Eric A. Joseph ,  Edmund M. Sikorski ,  Goh Matsuura

    IPC分类号： H01L21/768 ,  H01L23/00

    CPC分类号： H01L29/0657 ,  H01L21/30655 ,  H01L21/76898

    摘要： A hydrofluorocarbon gas is employed as a polymer deposition gas in an anisotropic etch process employing an alternation of an etchant gas and the polymer deposition gas to etch a deep trench in a semiconductor substrate. The hydrofluorocarbon gas can generate a thick carbon-rich and hydrogen-containing polymer on sidewalls of a trench at a thickness on par with the thickness of the polymer on a top surface of the semiconductor substrate. The thick carbon-rich and hydrogen-containing polymer protects sidewalls of a trench, thereby minimizing an undercut below a hard mask without degradation of the overall rate. In some embodiments, an improvement in the overall etch rate can be achieved.

    摘要翻译： 在各向异性蚀刻工艺中使用氢氟烃气体作为聚合物沉积气体，其使用蚀刻剂气体和聚合物沉积气体的交替来蚀刻半导体衬底中的深沟槽。 氢氟烃气体可以在半导体衬底的顶表面上与聚合物的厚度一致的厚度在沟槽的侧壁上产生厚的富碳和含氢聚合物。 厚的富碳和含氢聚合物保护沟槽的侧壁，从而使硬掩模下方的底切最小化，而不降低整体速率。 在一些实施例中，可以实现整体蚀刻速率的改进。