Invention Grant
- Patent Title: AlGaInN-based lasers produced using etched facet technology
- Patent Title (中): 基于AlGaInN的激光器采用蚀刻刻面技术生产
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Application No.: US13397612Application Date: 2012-02-15
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Publication No.: US08290013B2Publication Date: 2012-10-16
- Inventor: Alex A. Behfar , Alfred T. Schremer , Cristian B. Stagarescu , Vainateya
- Applicant: Alex A. Behfar , Alfred T. Schremer , Cristian B. Stagarescu , Vainateya
- Applicant Address: US NY Ithaca
- Assignee: Binoptics Corporation
- Current Assignee: Binoptics Corporation
- Current Assignee Address: US NY Ithaca
- Agent William A. Blake
- Main IPC: H01S5/00
- IPC: H01S5/00
Abstract:
A process for fabricating AlGaInN-based photonic devices, such as lasers, capable of emitting blue light employs dry etching to form device waveguides and mirrors. The dry etching is preferably performed using a Chemically Assisted Ion Beam Etching (CAIBE) system.
Public/Granted literature
- US20120149141A1 AlGaInN-Based Lasers Produced Using Etched Facet Technology Public/Granted day:2012-06-14
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