发明授权
US08298924B2 Method for differential spacer removal by wet chemical etch process and device with differential spacer structure
失效
通过湿化学蚀刻工艺和差分间隔结构的器件进行差分隔离物去除的方法
- 专利标题： Method for differential spacer removal by wet chemical etch process and device with differential spacer structure
- 专利标题（中）： 通过湿化学蚀刻工艺和差分间隔结构的器件进行差分隔离物去除的方法
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申请号： US11866491申请日： 2007-10-03
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公开(公告)号： US08298924B2公开(公告)日： 2012-10-30
- 发明人: Maciej Wiatr , Frank Wirbeleit , Andy Wei , Andreas Gehring
- 申请人： Maciej Wiatr , Frank Wirbeleit , Andy Wei , Andreas Gehring
- 申请人地址： US TX Austin
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Williams, Morgan & Amerson, P.C.
- 优先权： DE102007009916 20070228
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L21/04
摘要：
By removing an outer spacer of a transistor element, used for the formation of highly complex lateral dopant profiles, prior to the formation of metal silicide, employing a wet chemical etch process, it is possible to position a stressed contact liner layer more closely to the channel region, thereby allowing a highly efficient stress transfer mechanism for creating a corresponding strain in the channel region, without affecting circuit elements in the P-type regions.
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