发明授权
- 专利标题： Method of determining thermal property of substrate and method of deciding heat treatment condition
- 专利标题（中）： 确定基材热性能的方法和决定热处理条件的方法
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申请号： US11573257申请日： 2005-08-09
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公开(公告)号： US08308350B2公开(公告)日： 2012-11-13
- 发明人: Yoichiro Yasuda , Toshiyuki Tsukamoto , Masamori Sanaka , Hiroshi Asechi , Atsuhiro Ogura
- 申请人： Yoichiro Yasuda , Toshiyuki Tsukamoto , Masamori Sanaka , Hiroshi Asechi , Atsuhiro Ogura
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Moser Taboada
- 代理商 Alan Taboada
- 优先权： JP2004-232584 20040809
- 国际申请： PCT/JP2005/014577 WO 20050809
- 国际公布： WO2006/016579 WO 20060216
- 主分类号： G01N25/20
- IPC分类号： G01N25/20 ; G01K3/00 ; G01K13/00 ; G01J5/00
摘要：
[Problem] To provide a method that can determine a thermal property of a substrate in a short time and a method that can determine a thermal process condition of an open-loop step.[Solving Means] In accordance with the substrate thermal property determining method of the present invention in a rapid thermal processing apparatus 1 comprising lamps 9 for heating a wafer W and temperature sensors T1 to T7 arranged so as to oppose the lamps 9, temperature data sequentially outputted from the temperature sensors T1 to T7 is obtained, while subjecting the wafer W arranged between the lamps 9 and temperature sensors T1 to T7 to pulsed heating with the lamps 9. Thereafter, the thermal property of the wafer W is determined by using the temperature data.