摘要:
[Problem] To provide a method that can determine a thermal property of a substrate in a short time and a method that can determine a thermal process condition of an open-loop step. [Solving Means] In accordance with the substrate thermal property determining method of the present invention in a rapid thermal processing apparatus 1 comprising lamps 9 for heating a wafer W and temperature sensors T1 to T7 arranged so as to oppose the lamps 9, temperature data sequentially outputted from the temperature sensors T1 to T7 is obtained, while subjecting the wafer W arranged between the lamps 9 and temperature sensors T1 to T7 to pulsed heating with the lamps 9. Thereafter, the thermal property of the wafer W is determined by using the temperature data.
摘要:
[Problem] To provide a method that can determine a thermal property of a substrate in a short time and a method that can determine a thermal process condition of an open-loop step.[Solving Means] In accordance with the substrate thermal property determining method of the present invention in a rapid thermal processing apparatus 1 comprising lamps 9 for heating a wafer W and temperature sensors T1 to T7 arranged so as to oppose the lamps 9, temperature data sequentially outputted from the temperature sensors T1 to T7 is obtained, while subjecting the wafer W arranged between the lamps 9 and temperature sensors T1 to T7 to pulsed heating with the lamps 9. Thereafter, the thermal property of the wafer W is determined by using the temperature data.