公开(公告)号：US20070291818A1

公开(公告)日：2007-12-20

申请号：US11573257

申请日：2005-08-09

申请人： Yoichiro Yasuda ,  Toshiyuki Tsukamoto ,  Masamori Sanaka ,  Hiroshi Asechi ,  Atsuhiro Ogura

发明人： Yoichiro Yasuda ,  Toshiyuki Tsukamoto ,  Masamori Sanaka ,  Hiroshi Asechi ,  Atsuhiro Ogura

IPC分类号： G01N25/20

CPC分类号： H01L21/324 ,  G01N25/20 ,  G01N25/72 ,  H01L21/67115 ,  H01L21/67248

摘要： [Problem] To provide a method that can determine a thermal property of a substrate in a short time and a method that can determine a thermal process condition of an open-loop step. [Solving Means] In accordance with the substrate thermal property determining method of the present invention in a rapid thermal processing apparatus 1 comprising lamps 9 for heating a wafer W and temperature sensors T1 to T7 arranged so as to oppose the lamps 9, temperature data sequentially outputted from the temperature sensors T1 to T7 is obtained, while subjecting the wafer W arranged between the lamps 9 and temperature sensors T1 to T7 to pulsed heating with the lamps 9. Thereafter, the thermal property of the wafer W is determined by using the temperature data.

摘要翻译： [问题]提供一种可以在短时间内确定基板的热性能的方法以及可以确定开环步骤的热处理条件的方法。 [解决方案]根据本发明的基板热特性确定方法，在快速热处理设备1中，包括用于加热晶片W的灯9和布置成与灯9相对的温度传感器T 1至T 7，温度 在布置在灯9和温度传感器T 1至T 7之间的晶片W对灯9进行脉冲加热的同时，获得从温度传感器T 1至T 7顺序地输出的数据。 此后，通过使用温度数据来确定晶片W的热性质。

公开(公告)号：US08308350B2

公开(公告)日：2012-11-13

申请号：US11573257

申请日：2005-08-09

申请人： Yoichiro Yasuda ,  Toshiyuki Tsukamoto ,  Masamori Sanaka ,  Hiroshi Asechi ,  Atsuhiro Ogura

发明人： Yoichiro Yasuda ,  Toshiyuki Tsukamoto ,  Masamori Sanaka ,  Hiroshi Asechi ,  Atsuhiro Ogura

IPC分类号： G01N25/20 ,  G01K3/00 ,  G01K13/00 ,  G01J5/00

CPC分类号： H01L21/324 ,  G01N25/20 ,  G01N25/72 ,  H01L21/67115 ,  H01L21/67248

摘要： [Problem] To provide a method that can determine a thermal property of a substrate in a short time and a method that can determine a thermal process condition of an open-loop step.[Solving Means] In accordance with the substrate thermal property determining method of the present invention in a rapid thermal processing apparatus 1 comprising lamps 9 for heating a wafer W and temperature sensors T1 to T7 arranged so as to oppose the lamps 9, temperature data sequentially outputted from the temperature sensors T1 to T7 is obtained, while subjecting the wafer W arranged between the lamps 9 and temperature sensors T1 to T7 to pulsed heating with the lamps 9. Thereafter, the thermal property of the wafer W is determined by using the temperature data.

摘要翻译： [问题]提供一种可以在短时间内确定基板的热性能的方法以及可以确定开环步骤的热处理条件的方法。 [解决方案]根据本发明的快速热处理装置1中的基板热特性确定方法，包括用于加热晶片W的灯9和布置成与灯9相对布置的温度传感器T1至T7，温度数据顺序地 在将灯9和温度传感器T1〜T7之间配置的晶片W进行脉冲加热的同时，对从温度传感器T1〜T7输出的温度传感器T1〜T7进行脉冲加热。此后，通过使用温度 数据。