发明授权
US08309447B2 Method for integrating multiple threshold voltage devices for CMOS
有权
用于集成多个CMOS阈值电压器件的方法
- 专利标题： Method for integrating multiple threshold voltage devices for CMOS
- 专利标题（中）： 用于集成多个CMOS阈值电压器件的方法
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申请号： US12855273申请日： 2010-08-12
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公开(公告)号： US08309447B2公开(公告)日： 2012-11-13
- 发明人: Kangguo Cheng , Bruce B. Doris , Lisa F. Edge , Balasubramanian S. Haran , Hemanth Jagannathan , Ali Khakifirooz , Vamsi K. Paruchuri
- 申请人： Kangguo Cheng , Bruce B. Doris , Lisa F. Edge , Balasubramanian S. Haran , Hemanth Jagannathan , Ali Khakifirooz , Vamsi K. Paruchuri
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Louis J. Percello, Esq.
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/4763
摘要：
A method to achieve multiple threshold voltage (Vt) devices on the same semiconductor chip is disclosed. The method provides different threshold voltage devices using threshold voltage adjusting materials and a subsequent drive in anneal instead of directly doping the channel. As such, the method of the present disclosure avoids short channel penalties. Additionally, no ground plane/back gates are utilized in the present application thereby the method of the present disclosure can be easily integrated into current complementary metal oxide semiconductor (CMOS) processing technology.
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