Invention Grant
- Patent Title: Methods of forming conductive contacts in the fabrication of integrated circuitry
- Patent Title (中): 在集成电路制造中形成导电触点的方法
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Application No.: US12917339Application Date: 2010-11-01
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Publication No.: US08334196B2Publication Date: 2012-12-18
- Inventor: Ying-Cheng Chuang , Hung-Ming Tsai , Sheng-Wei Yang , Ping-Cheng Hsu , Ming-Cheng Chang
- Applicant: Ying-Cheng Chuang , Hung-Ming Tsai , Sheng-Wei Yang , Ping-Cheng Hsu , Ming-Cheng Chang
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/28
Abstract:
A method of forming a conductive contact includes forming a structure comprising an upper surface joining with a sidewall surface. The sidewall surface contains elemental-form silicon. Silicon is epitaxially grown from the sidewall surface. Dielectric material is formed over the upper surface and the epitaxially-grown silicon. A conductive contact is formed through the dielectric material to conductively connect with the upper surface.
Public/Granted literature
- US20120108047A1 Methods Of Forming Conductive Contacts In The Fabrication Of Integrated Circuitry Public/Granted day:2012-05-03
Information query
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