发明授权
US08338857B2 Germanium/silicon avalanche photodetector with separate absorption and multiplication regions
有权
锗/硅雪崩光电探测器，具有单独的吸收和乘法区域
- 专利标题： Germanium/silicon avalanche photodetector with separate absorption and multiplication regions
- 专利标题（中）： 锗/硅雪崩光电探测器，具有单独的吸收和乘法区域
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申请号： US12870811申请日： 2010-08-28
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公开(公告)号： US08338857B2公开(公告)日： 2012-12-25
- 发明人: Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
- 申请人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： H01L31/028
- IPC分类号： H01L31/028 ; H01L31/0352
摘要：
A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
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