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1.发明授权Germanium/silicon avalanche photodetector with separate absorption and multiplication regions 有权锗/硅雪崩光电探测器，具有单独的吸收和乘法区域公开(公告)号：US08829566B2
公开(公告)日：2014-09-09
申请号：US11724805
申请日：2007-03-15
IPC分类号： H01L31/107 , H01L31/18 , H01L31/028 , H01L31/0312
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译： 公开了一种基于半导体波导的光接收器。 根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。 第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。 倍增区域被定义为接近并与吸收区域分离。 乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。
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2.发明授权Germanium/silicon avalanche photodetector with separate absorption and multiplication regions 有权锗/硅雪崩光电探测器，具有单独的吸收和乘法区域公开(公告)号：US08338857B2
公开(公告)日：2012-12-25
申请号：US12870811
申请日：2010-08-28
IPC分类号： H01L31/028 , H01L31/0352
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译： 公开了一种基于半导体波导的光接收器。 根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。 第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。 倍增区域被定义为接近并与吸收区域分离。 乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。
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3.发明申请GERMANIUM/SILICON AVALANCHE PHOTODETECTOR WITH SEPARATE ABSORPTION AND MULTIPLICATION REGIONS 有权具有单独吸收和多样化区域的锗/硅玻璃光电转换器公开(公告)号：US20100320502A1
公开(公告)日：2010-12-23
申请号：US12870811
申请日：2010-08-28
IPC分类号： H01L31/107
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译： 公开了一种基于半导体波导的光接收器。 根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。 第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。 倍增区域被定义为接近并与吸收区域分离。 乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。
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4.发明授权Germanium/silicon avalanche photodetector with separate absorption and multiplication regions 有权锗/硅雪崩光电探测器，具有单独的吸收和乘法区域公开(公告)号：US07233051B2
公开(公告)日：2007-06-19
申请号：US11170556
申请日：2005-06-28
IPC分类号： H01L31/107
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译： 公开了一种基于半导体波导的光接收器。 根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。 第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。 倍增区域被定义为接近并与吸收区域分离。 乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。
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5.发明申请GERMANIUM/SILICON AVALANCHE PHOTODETECTOR WITH SEPARATE ABSORPTION AND MULTIPLICATION REGIONS 审中-公开具有单独吸收和多样化区域的锗/硅玻璃光电转换器公开(公告)号：US20140367740A1
公开(公告)日：2014-12-18
申请号：US14472241
申请日：2014-08-28
IPC分类号： H01L31/107 , H01L27/146
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译： 公开了一种基于半导体波导的光接收器。 根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。 第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。 倍增区域被定义为接近并与吸收区域分离。 乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。
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公开(公告)号：US08278741B2
公开(公告)日：2012-10-02
申请号：US12495665
申请日：2009-06-30
IPC分类号： H01L31/105
CPC分类号： G02B6/12004 , G02B6/12007 , G02B6/124 , G02B6/132 , G02B6/4202 , G02B6/4215 , G02B2006/12061 , G02B2006/12123 , H01L31/035272 , H01L31/105
摘要： Sidewall photodetectors for integrated photonic devices and their method of manufacture. An embodiment includes a p-i-n film stack formed on a sidewall of a substrate semiconductor feature having sufficiently large area to accommodate the spot size of a multi-mode fiber. An embodiment includes a first sidewall photodetector coupled to a second sidewall photodetector by a waveguide, the first sidewall photodetector having an i-layer tuned to absorb a first wavelength of light incident to the first sidewall and pass a second wavelength of light to the second sidewall photodetector having an i-layer tuned to absorb the second wavelength.
摘要翻译： 集成光子器件的侧壁光电探测器及其制造方法。 实施例包括形成在具有足够大的面积以容纳多模光纤的光点尺寸的衬底半导体特征的侧壁上的p-i-n膜堆叠。 一个实施例包括通过波导耦合到第二侧壁光电检测器的第一侧壁光电检测器，第一侧壁光电检测器具有被调谐以吸收入射到第一侧壁的第一波长的光并将第二波长的光传递到第二侧壁的i层 具有被调谐以吸收第二波长的i层的光电检测器。
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公开(公告)号：US20100327381A1
公开(公告)日：2010-12-30
申请号：US12495665
申请日：2009-06-30
IPC分类号： H01L31/105 , H01L31/18 , H01L31/0232
CPC分类号： G02B6/12004 , G02B6/12007 , G02B6/124 , G02B6/132 , G02B6/4202 , G02B6/4215 , G02B2006/12061 , G02B2006/12123 , H01L31/035272 , H01L31/105
摘要： Sidewall photodetectors for integrated photonic devices and their method of manufacture. An embodiment includes a p-i-n film stack formed on a sidewall of a substrate semiconductor feature having sufficiently large area to accommodate the spot size of a multi-mode fiber. An embodiment includes a first sidewall photodetector coupled to a second sidewall photodetector by a waveguide, the first sidewall photodetector having an i-layer tuned to absorb a first wavelength of light incident to the first sidewall and pass a second wavelength of light to the second sidewall photodetector having an i-layer tuned to absorb the second wavelength.
摘要翻译： 集成光子器件的侧壁光电探测器及其制造方法。 实施例包括形成在具有足够大的面积以容纳多模光纤的光点尺寸的衬底半导体特征的侧壁上的p-i-n膜堆叠。 一个实施例包括通过波导耦合到第二侧壁光电检测器的第一侧壁光电检测器，第一侧壁光电检测器具有被调谐以吸收入射到第一侧壁的第一波长的光并将第二波长的光传递到第二侧壁的i层 具有被调谐以吸收第二波长的i层的光电检测器。
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8.发明授权Method and apparatus for steering an optical beam in a semiconductor substrate 有权用于在半导体衬底中转向光束的方法和装置公开(公告)号：US06690036B2
公开(公告)日：2004-02-10
申请号：US09811171
申请日：2001-03-16
申请人： Ansheng Liu , Mario J. Paniccia , Michael T. Morse , Dmitri E. Nikonov , Yi Ding
发明人： Ansheng Liu , Mario J. Paniccia , Michael T. Morse , Dmitri E. Nikonov , Yi Ding
IPC分类号： H01L2724
CPC分类号： G02B6/122 , G02B6/2813 , G02F1/025 , G02F1/2955 , G02F2001/217
摘要： An optical steering method and apparatus. In one aspect of the present invention, the disclosed apparatus includes a multi-mode interference (MMI) device disposed in a semiconductor substrate. The MMI device includes an input and a plurality of outputs Each one of the plurality of outputs of the MMI device is optically coupled to the input of the MMI device. A phase array is disposed in the semiconductor substrate. The phase array includes a plurality of inputs and a plurality of outputs. The plurality of inputs of the phase array optically are coupled to the plurality of outputs of the phase array. The phase array is coupled to control relative phase differences between optical beams output by each one of the plurality of outputs of the phase array.
摘要翻译： 一种光学转向方法和装置。 在本发明的一个方面，所公开的装置包括设置在半导体衬底中的多模干涉（MMI）装置。 MMI设备包括输入和多个输出MMI设备的多个输出中的每一个光学耦合到MMI设备的输入。 相位阵列设置在半导体衬底中。 相位阵列包括多个输入和多个输出。 光学上的相位阵列的多个输入耦合到相位阵列的多个输出端。 相位阵列被耦合以控制由相位阵列的多个输出中的每一个输出的光束之间的相对相位差。
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9.发明授权Method and apparatus for steering an optical beam in a semiconductor substrate 失效用于在半导体衬底中转向光束的方法和装置公开(公告)号：US06891653B2
公开(公告)日：2005-05-10
申请号：US10177872
申请日：2002-06-19
申请人： Ansheng Liu , Mario J. Paniccia , Michael T. Morse , Dmitri E. Nikonov , Yi Ding
发明人： Ansheng Liu , Mario J. Paniccia , Michael T. Morse , Dmitri E. Nikonov , Yi Ding
CPC分类号： G02B6/122 , G02B6/2813 , G02F1/025 , G02F1/2955 , G02F2001/217
摘要： An optical steering method and apparatus. In one aspect of the present invention, the disclosed apparatus includes a multi-mode interference (MMI) device disposed in a semiconductor substrate. The MMI device includes an input and a plurality of outputs. Each one of the plurality of outputs of the MMI device is optically coupled to the input of the MMI device. A phase array is disposed in the semiconductor substrate. The phase array includes a plurality of inputs and a plurality of outputs. The plurality of inputs of the phase array optically are coupled to the plurality of outputs of the phase array. The phase array is coupled to control relative phase differences between optical beams output by each one of the plurality of outputs of the phase array.
摘要翻译： 一种光学转向方法和装置。 在本发明的一个方面，所公开的装置包括设置在半导体衬底中的多模干涉（MMI）装置。 MMI设备包括输入和多个输出。 MMI设备的多个输出中的每一个光耦合到MMI设备的输入。 相位阵列设置在半导体衬底中。 相位阵列包括多个输入和多个输出。 光学上的相位阵列的多个输入耦合到相位阵列的多个输出端。 相位阵列被耦合以控制由相位阵列的多个输出中的每一个输出的光束之间的相对相位差。
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10.发明授权公开(公告)号：US07116847B2
公开(公告)日：2006-10-03
申请号：US11205409
申请日：2005-08-16
申请人： Ansheng Liu , Richard Jones , Mario J. Paniccia , Graham T. Reed
发明人： Ansheng Liu , Richard Jones , Mario J. Paniccia , Graham T. Reed
IPC分类号： G02F1/295
CPC分类号： G02F1/025 , G02F2203/06
摘要： An apparatus and method for modulating a phase of optical beam independent of polarization. In one embodiment, an apparatus according to embodiments of the present invention includes a first region of an optical waveguide disposed in semiconductor material, the first region having a first conductivity type, and a second region of the optical waveguide disposed in the semiconductor material, the second region having a second conductivity type opposite to the first conductivity type. The apparatus also includes a substantially V shaped insulating region disposed between the first and second regions of the optical waveguide, wherein a vertex of the substantially V shaped insulating region forms an intersecting line that is substantially parallel to an optical path of an optical beam to be directed through the optical waveguide.
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