公开(公告)号：US08829566B2

公开(公告)日：2014-09-09

申请号：US11724805

申请日：2007-03-15

申请人： Michael T. Morse ,  Olufemi I. Dosunmu ,  Ansheng Liu ,  Mario J. Paniccia

发明人： Michael T. Morse ,  Olufemi I. Dosunmu ,  Ansheng Liu ,  Mario J. Paniccia

IPC分类号： H01L31/107 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0312

CPC分类号： H01L31/1075 ,  H01L27/14629 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/1812 ,  Y02E10/547

摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

摘要翻译： 公开了一种基于半导体波导的光接收器。 根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。 第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。 倍增区域被定义为接近并与吸收区域分离。 乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

公开(公告)号：US08338857B2

公开(公告)日：2012-12-25

申请号：US12870811

申请日：2010-08-28

申请人： Michael T. Morse ,  Olufemi I. Dosunmu ,  Ansheng Liu ,  Mario J. Paniccia

发明人： Michael T. Morse ,  Olufemi I. Dosunmu ,  Ansheng Liu ,  Mario J. Paniccia

IPC分类号： H01L31/028 ,  H01L31/0352

CPC分类号： H01L31/1075 ,  H01L27/14629 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/1812 ,  Y02E10/547

摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

摘要翻译： 公开了一种基于半导体波导的光接收器。 根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。 第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。 倍增区域被定义为接近并与吸收区域分离。 乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

公开(公告)号：US20110073972A1

公开(公告)日：2011-03-31

申请号：US12567601

申请日：2009-09-25

申请人： John Heck ,  Ansheng Liu ,  Michael T. Morse ,  Haisheng Rong

发明人： John Heck ,  Ansheng Liu ,  Michael T. Morse ,  Haisheng Rong

IPC分类号： H01L31/0232 ,  H01L21/306

CPC分类号： H01L31/02327 ,  G02B6/4214

摘要： A vertical total internal reflection (TIR) mirror and fabrication thereof is made by creating a re-entrant profile using crystallographic silicon etching. Starting with an SOI wafer, a deep silicon etch is used to expose the buried oxide layer, which is then wet-etched (in HF), opening the bottom surface of the Si device layer. This bottom silicon surface is then exposed so that in a crystallographic etch, the resulting shape is a re-entrant trapezoid with facets These facets can be used in conjunction with planar silicon waveguides to reflect the light upwards based on the TIR principle. Alternately, light can be coupled into the silicon waveguides from above the wafer for such purposes as wafer level testing.

摘要翻译： 垂直全内反射（TIR）镜及其制造是通过使用晶体硅蚀刻创建入门轮廓而制成的。 从SOI晶片开始，使用深硅蚀刻来暴露掩埋氧化物层，然后将其湿法蚀刻（在HF中），打开Si器件层的底表面。 然后将该底部硅表面暴露，使得在晶体刻蚀中，所得到的形状是具有刻面的重入梯形。这些刻面可以与平面硅波导结合使用以基于TIR原理向上反射光。 或者，光可以从晶片上方耦合到硅波导中，用于晶片级测试。

公开(公告)号：US20100320502A1

公开(公告)日：2010-12-23

申请号：US12870811

申请日：2010-08-28

申请人： Michael T. Morse ,  Olufemi I. Dosunmu ,  Ansheng Liu ,  Mario J. Paniccia

发明人： Michael T. Morse ,  Olufemi I. Dosunmu ,  Ansheng Liu ,  Mario J. Paniccia

IPC分类号： H01L31/107

CPC分类号： H01L31/1075 ,  H01L27/14629 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/1812 ,  Y02E10/547

摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

摘要翻译： 公开了一种基于半导体波导的光接收器。 根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。 第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。 倍增区域被定义为接近并与吸收区域分离。 乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

公开(公告)号：US07741657B2

公开(公告)日：2010-06-22

申请号：US11488311

申请日：2006-07-17

申请人： Alexandre Pauchard ,  Michael T. Morse

发明人： Alexandre Pauchard ,  Michael T. Morse

IPC分类号： H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L31/1075 ,  H01L31/035281 ,  Y02E10/50

摘要： An avalanche photodetector is disclosed. An apparatus according to aspects of the present invention includes a semiconductor substrate layer including a first type of semiconductor material. The apparatus also includes a multiplication layer including the first type of semiconductor material disposed proximate to the semiconductor substrate layer. The apparatus also includes an absorption layer having a second type of semiconductor material disposed proximate to the multiplication layer such that the multiplication layer is disposed between the absorption layer and the semiconductor substrate layer. The absorption layer is optically coupled to receive and absorb an optical beam. The apparatus also includes an n+ doped region of the first type of semiconductor material defined at a surface of the multiplication layer opposite the absorption layer. A high electric field is generated in the multiplication layer to multiply charge carriers photo-generated in response to the absorption of the optical beam received in the absorption layer.

摘要翻译： 公开了一种雪崩光电探测器。 根据本发明的方面的装置包括包括第一类型的半导体材料的半导体衬底层。 该装置还包括一个乘法层，其包括靠近半导体衬底层设置的第一类型的半导体材料。 该装置还包括具有靠近乘法层设置的第二类型的半导体材料的吸收层，使得倍增层设置在吸收层和半导体衬底层之间。 吸收层被光学耦合以接收和吸收光束。 该装置还包括在与吸收层相对的增殖层的表面处限定的第一类型的半导体材料的n +掺杂区域。 在乘法层中产生高电场，以便响应于在吸收层中接收的光束的吸收而光电产生的电荷载流子。

公开(公告)号：US07233051B2

公开(公告)日：2007-06-19

申请号：US11170556

申请日：2005-06-28

申请人： Michael T. Morse ,  Olufemi I. Dosunmu ,  Ansheng Liu ,  Mario J. Paniccia

发明人： Michael T. Morse ,  Olufemi I. Dosunmu ,  Ansheng Liu ,  Mario J. Paniccia

IPC分类号： H01L31/107

CPC分类号： H01L31/1075 ,  H01L27/14629 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/1812 ,  Y02E10/547

摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

摘要翻译： 公开了一种基于半导体波导的光接收器。 根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。 第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。 倍增区域被定义为接近并与吸收区域分离。 乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

公开(公告)号：US06891653B2

公开(公告)日：2005-05-10

申请号：US10177872

申请日：2002-06-19

申请人： Ansheng Liu ,  Mario J. Paniccia ,  Michael T. Morse ,  Dmitri E. Nikonov ,  Yi Ding

发明人： Ansheng Liu ,  Mario J. Paniccia ,  Michael T. Morse ,  Dmitri E. Nikonov ,  Yi Ding

IPC分类号： G02B6/122 ,  G02B6/28 ,  G02F1/025 ,  G02F1/295

CPC分类号： G02B6/122 ,  G02B6/2813 ,  G02F1/025 ,  G02F1/2955 ,  G02F2001/217

摘要： An optical steering method and apparatus. In one aspect of the present invention, the disclosed apparatus includes a multi-mode interference (MMI) device disposed in a semiconductor substrate. The MMI device includes an input and a plurality of outputs. Each one of the plurality of outputs of the MMI device is optically coupled to the input of the MMI device. A phase array is disposed in the semiconductor substrate. The phase array includes a plurality of inputs and a plurality of outputs. The plurality of inputs of the phase array optically are coupled to the plurality of outputs of the phase array. The phase array is coupled to control relative phase differences between optical beams output by each one of the plurality of outputs of the phase array.

摘要翻译： 一种光学转向方法和装置。 在本发明的一个方面，所公开的装置包括设置在半导体衬底中的多模干涉（MMI）装置。 MMI设备包括输入和多个输出。 MMI设备的多个输出中的每一个光耦合到MMI设备的输入。 相位阵列设置在半导体衬底中。 相位阵列包括多个输入和多个输出。 光学上的相位阵列的多个输入耦合到相位阵列的多个输出端。 相位阵列被耦合以控制由相位阵列的多个输出中的每一个输出的光束之间的相对相位差。

公开(公告)号：US07209623B2

公开(公告)日：2007-04-24

申请号：US11121511

申请日：2005-05-03

申请人： Michael T. Morse

发明人： Michael T. Morse

IPC分类号： H01L29/732 ,  H01L31/00 ,  G02B6/10

CPC分类号： G02B6/12007 ,  G02B6/12004 ,  G02B6/4215 ,  H01L31/1075

摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region defined along an optical waveguide. The absorption region includes a first type of semiconductor material having a first refractive index. The apparatus also includes a multiplication region defined along the optical waveguide. The multiplication region is proximate to and separate from the absorption region. The multiplication region includes a second type of semiconductor material having a second refractive index. The first refractive index greater than the second refractive index such that an optical beam directed through the optical waveguide is pulled towards the absorption region from the multiplication region and absorbed in the absorption region to create electron-hole pairs from the optical beam. The multiplication region includes first and second doped regions defined along the optical waveguide. The first and second doped regions have opposite polarity to create an electric field to multiply the electrons created in the absorption region.

摘要翻译： 公开了一种基于半导体波导的光接收器。 根据本发明的方面的装置包括沿着光波导限定的吸收区域。 吸收区域包括具有第一折射率的第一类型的半导体材料。 该装置还包括沿着光波导限定的乘法区域。 乘法区域与吸收区域接近并分离。 倍增区域包括具有第二折射率的第二类型的半导体材料。 大于第二折射率的第一折射率使得通过光波导的光束从倍增区域被拉向吸收区域并被吸收在吸收区域中以从光束产生电子 - 空穴对。 倍增区域包括沿着光波导限定的第一和第二掺杂区域。 第一和第二掺杂区域具有相反的极性以产生电场以乘以在吸收区域中产生的电子。

公开(公告)号：US07088888B2

公开(公告)日：2006-08-08

申请号：US10822302

申请日：2004-04-09

申请人： Ansheng Liu ,  Shlomo Ovadia ,  Dean A. Samara-Rubio ,  Michael T. Morse

发明人： Ansheng Liu ,  Shlomo Ovadia ,  Dean A. Samara-Rubio ,  Michael T. Morse

IPC分类号： G02B6/34

CPC分类号： G02B6/124

摘要： A waveguide Bragg grating (WBG) is apodized by varying the duty cycle of selected grating periods while fixing the pitch of the grating periods. In one embodiment, the WBG is implemented in a silicon substrate using polysilicon filled trenches of varying width while keeping the grating periods' pitch constant. The polysilicon trenches are formed so that if the width of one trench is increased compared to an adjacent grating period, the trench width in the other adjacent grating period (if present) is decreased.

摘要翻译： 波导布拉格光栅（WBG）通过在固定光栅周期的间距的同时改变所选光栅周期的占空比来变迹。 在一个实施例中，WBG在使用多晶硅填充的宽度不同的沟槽的硅衬底中实现，同时保持光栅周期的间距恒定。 形成多晶硅沟槽，使得如果与相邻光栅周期相比，一个沟槽的宽度增加，则另一个相邻光栅周期（如果存在）中的沟槽宽度减小。

公开(公告)号：US06818468B2

公开(公告)日：2004-11-16

申请号：US10336099

申请日：2003-01-03

申请人： Michael T. Morse

发明人： Michael T. Morse

IPC分类号： H01L2100

CPC分类号： B82Y20/00 ,  G02B6/12007 ,  G02B6/1223 ,  G02B6/131 ,  G02B6/1347 ,  G02B2006/12107 ,  G02B2006/12109 ,  G02B2006/1215

摘要： Methods and apparatuses for incorporating low contrast and high contrast interfaces in optical devices. In one embodiment an insulator is disposed proximate to a plurality of regions of a semiconductor including regions through which an optical beam is directed. High contrast interfaces are defined between the semiconductor and the insulator. Low contrast interfaces are defined between a doped region and the semiconductor. The optical beam is directed through the doped region from one of the plurality of semiconductor regions to another of the plurality of regions with relatively low loss. Optical coupling or evanescent coupling depending on an incident angle of the optical beam relative to the low contrast interface may occur through the doped region and low contrast interface.