发明授权
- 专利标题： Image sensor with low electrical cross-talk
- 专利标题（中）： 图像传感器具有低电气串扰
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申请号： US12259143申请日： 2008-10-27
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公开(公告)号： US08357984B2公开(公告)日： 2013-01-22
- 发明人: Duli Mao , Sohei Manabe , Vincent Venezia , Hsin-Chih Tai , Hidetoshi Nozaki , Yin Qian , Howard E. Rhodes
- 申请人： Duli Mao , Sohei Manabe , Vincent Venezia , Hsin-Chih Tai , Hidetoshi Nozaki , Yin Qian , Howard E. Rhodes
- 申请人地址： US CA Santa Clara
- 专利权人： OmniVision Technologies, Inc.
- 当前专利权人： OmniVision Technologies, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely Sokoloff Taylor & Zafman LLP
- 主分类号： H01L27/146
- IPC分类号： H01L27/146
摘要：
An array of pixels is formed using a substrate, where each pixel has a substrate having a backside and a frontside that includes metalization layers, a photodiode formed in the substrate, frontside P-wells formed using frontside processing that are adjacent to the photosensitive region, and an N-type region formed in the substrate below the photodiode. The N-type region is formed in a region of the substrate below the photodiode and is formed at least in part in a region of the substrate that is deeper than the depth of the frontside P-wells.
公开/授权文献
- US20090200590A1 IMAGE SENSOR WITH LOW ELECTRICAL CROSS-TALK 公开/授权日：2009-08-13
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