发明授权
- 专利标题： Oxide semiconductor and thin film transistor including the same
- 专利标题（中）： 包括其的氧化物半导体和薄膜晶体管
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申请号： US12659837申请日： 2010-03-23
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公开(公告)号： US08378342B2公开(公告)日： 2013-02-19
- 发明人: Tae-sang Kim , Sang-yoon Lee , Jang-yeon Kwon , Kyoung-seok Son , Ji-sim Jung , Kwang-hee Lee
- 申请人： Tae-sang Kim , Sang-yoon Lee , Jang-yeon Kwon , Kyoung-seok Son , Ji-sim Jung , Kwang-hee Lee
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2009-0024575 20090323; KR10-2010-0014739 20100218
- 主分类号： H01L29/786
- IPC分类号： H01L29/786
摘要：
Provided are an oxide semiconductor and an oxide thin film transistor including the oxide semiconductor. The oxide semiconductor may be formed of an indium (In)-zinc (Zn) oxide in which hafnium (Hf) is contained, wherein In, Zn, and Hf are contained in predetermined or given composition ratios.
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