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    Transistor, electronic device including a transistor and methods of manufacturing the same
    6.
    发明申请
    Transistor, electronic device including a transistor and methods of manufacturing the same 审中-公开
    晶体管，包括晶体管的电子器件及其制造方法

    公开(公告)号：US20100321279A1

    公开(公告)日：2010-12-23

    申请号：US12591914

    申请日：2009-12-04

    申请人： Ji-sim Jung ,  Sang-yoon Lee ,  Kwang-hee Lee ,  Jang-yeon Kwon ,  Kyoung-seok Son

    发明人： Ji-sim Jung ,  Sang-yoon Lee ,  Kwang-hee Lee ,  Jang-yeon Kwon ,  Kyoung-seok Son

    IPC分类号： G09G3/30 ,  H01L29/12 ,  H01L29/786 ,  G09G3/20

    CPC分类号： H01L29/7869 ,  H01L27/3272

    摘要： Disclosed are a transistor, an electronic device and methods of manufacturing the same, the transistor including a photo relaxation layer between a channel layer and a gate insulating layer in order to suppress characteristic variations of the transistor due to light. The photo relaxation layer may be a layer of a material capable of suppressing variations in a threshold voltage of the transistor due to light. The photo relaxation layer may contain a metal oxide such as aluminum (Al) oxide. The channel layer may contain an oxide semiconductor.

    摘要翻译： 公开了晶体管，电子器件及其制造方法，晶体管包括沟道层和栅极绝缘层之间的光弛豫层，以抑制由于光引起的晶体管的特性变化。 光弛豫层可以是能够抑制由于光引起的晶体管的阈值电压的变化的材料层。 光弛豫层可以含有氧化铝（Al）等金属氧化物。 沟道层可以含有氧化物半导体。

    Method of manufacturing ZnO-based thin film transistor
    7.
    发明授权
    Method of manufacturing ZnO-based thin film transistor 有权
    制造ZnO基薄膜晶体管的方法

    公开(公告)号：US08735229B2

    公开(公告)日：2014-05-27

    申请号：US12110744

    申请日：2008-04-28

    申请人： Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

    发明人： Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

    IPC分类号： H01L21/00

    CPC分类号： H01L29/7869

    摘要： A ZnO-based thin film transistor (TFT) is provided herein. Also provided is a method for manufacturing the TFT. The ZnO-based TFT is very sensitive to the oxygen concentration present in a channel layer. In order to prevent damage to a channel layer of a bottom gate TFT, and to avoid a deep negative threshold voltage resulting from damage to the channel layer, the method for manufacturing the ZnO-based TFT comprises formation of an etch stop layer or a passivation layer comprising unstable or incompletely bonded oxygen, and annealing the layers to induce an interfacial reaction between the oxide layer and the channel layer and to reduce the carrier concentration.

    摘要翻译： 本文提供了一种ZnO基薄膜晶体管（TFT）。 还提供了一种用于制造TFT的方法。 ZnO基TFT对通道层中存在的氧浓度非常敏感。 为了防止对底栅TFT的沟道层的损坏，并且为了避免由于对沟道层的损坏而产生的深负阈值电压，制造ZnO基TFT的方法包括形成蚀刻停止层或钝化层 层，其包含不稳定或不完全结合的氧，并且退火层以在氧化物层和沟道层之间引起界面反应并降低载流子浓度。

    Methods of manufacturing an oxide semiconductor thin film transistor
    9.
    发明授权
    Methods of manufacturing an oxide semiconductor thin film transistor 有权
    制造氧化物半导体薄膜晶体管的方法

    公开(公告)号：US07767505B2

    公开(公告)日：2010-08-03

    申请号：US12153651

    申请日：2008-05-22

    申请人： Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

    发明人： Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

    IPC分类号： H01L21/84

    CPC分类号： H01L29/7869 ,  H01L29/66969

    摘要： Methods of manufacturing an oxide semiconductor thin film transistor are provided. The methods include forming a gate on a substrate, and a gate insulating layer on the substrate to cover the gate. A channel layer, which is formed of an oxide semiconductor, may be formed on the gate insulating layer. Source and drain electrodes may be formed on opposing sides of the channel layer. The method includes forming supplying oxygen to the channel layer, forming a passivation layer to cover the source and drain electrodes and the channel layer, and performing an annealing process after forming the passivation layer.

    摘要翻译： 提供了制造氧化物半导体薄膜晶体管的方法。 所述方法包括在衬底上形成栅极，以及在衬底上形成栅极绝缘层以覆盖栅极。 可以在栅极绝缘层上形成由氧化物半导体形成的沟道层。 源极和漏极可以形成在沟道层的相对侧上。 所述方法包括：向所述沟道层形成供氧，形成钝化层以覆盖所述源漏电极和所述沟道层，以及在形成所述钝化层之后进行退火处理。

    Methods of manufacturing an oxide semiconductor thin film transistor
    10.
    发明申请
    Methods of manufacturing an oxide semiconductor thin film transistor 有权
    制造氧化物半导体薄膜晶体管的方法

    公开(公告)号：US20090142887A1

    公开(公告)日：2009-06-04

    申请号：US12153651

    申请日：2008-05-22

    申请人： Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

    发明人： Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

    IPC分类号： H01L21/84

    CPC分类号： H01L29/7869 ,  H01L29/66969

    摘要： Methods of manufacturing an oxide semiconductor thin film transistor are provided. The methods include forming a gate on a substrate, and a gate insulating layer on the substrate to cover the gate. A channel layer, which is formed of an oxide semiconductor, may be formed on the gate insulating layer. Source and drain electrodes may be formed on opposing sides of the channel layer. The method includes forming supplying oxygen to the channel layer, forming a passivation layer to cover the source and drain electrodes and the channel layer, and performing an annealing process after forming the passivation layer.

    摘要翻译： 提供了制造氧化物半导体薄膜晶体管的方法。 所述方法包括在衬底上形成栅极，以及在衬底上形成栅极绝缘层以覆盖栅极。 可以在栅极绝缘层上形成由氧化物半导体形成的沟道层。 源极和漏极可以形成在沟道层的相对侧上。 所述方法包括：向所述沟道层形成供氧，形成钝化层以覆盖所述源漏电极和所述沟道层，以及在形成所述钝化层之后进行退火处理。