发明授权
- 专利标题： Methods of forming copper wiring and copper film, and film forming system
- 专利标题（中）： 形成铜线和铜膜的方法以及成膜系统
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申请号： US13081172申请日： 2011-04-06
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公开(公告)号： US08399353B2公开(公告)日： 2013-03-19
- 发明人: Tadahiro Ishizaka , Atsushi Gomi , Takara Kato , Osamu Yokoyama , Takashi Sakuma , Chiaki Yasumuro , Hiroyuki Toshima , Tatsuo Hatano , Yasushi Mizusawa , Masamichi Hara
- 申请人： Tadahiro Ishizaka , Atsushi Gomi , Takara Kato , Osamu Yokoyama , Takashi Sakuma , Chiaki Yasumuro , Hiroyuki Toshima , Tatsuo Hatano , Yasushi Mizusawa , Masamichi Hara
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Nath, Goldberg & Meyer
- 代理商 Jerald L. Meyer
- 优先权： JP2011-15663 20110127; JP2011-15664 20110127
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding copper in the trench or hole by forming a Cu film on the Ru film using PVD while heating the substrate such that migration of copper into the trench or hole occurs.
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