发明授权
- 专利标题： High voltage semiconductor device including field shaping layer and method of fabricating the same
- 专利标题（中）： 包括场成形层的高电压半导体器件及其制造方法
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申请号： US12495948申请日： 2009-07-01
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公开(公告)号： US08399923B2公开(公告)日： 2013-03-19
- 发明人: Yong-cheol Choi , Chang-ki Jeon , Min-suk Kim
- 申请人： Yong-cheol Choi , Chang-ki Jeon , Min-suk Kim
- 申请人地址： KR
- 专利权人： Fairchild Korea Semiconductor Ltd.
- 当前专利权人： Fairchild Korea Semiconductor Ltd.
- 当前专利权人地址： KR
- 代理机构： Cantor Colburn LLP
- 优先权： KR10-2008-0065139 20080704
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
Provided are a high voltage semiconductor device in which a field shaping layer is formed on the entire surface of a semiconductor substrate and a method of fabricating the same. Specifically, the high voltage semiconductor device includes a first conductivity-type semiconductor substrate. A second conductivity-type semiconductor layer is disposed on a surface of the semiconductor substrate, and a first conductivity-type body region is formed in semiconductor layer. A second conductivity-type source region is formed in the body region. A drain region is formed in the semiconductor layer and is separated from the body region. The field shaping layer is formed on the entire surface of the semiconductor layer facing the semiconductor layer.