发明授权
- 专利标题： Thin film transistor structure, method of manufacturing the same, and electronic device
- 专利标题（中）： 薄膜晶体管结构，制造方法及电子器件
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申请号： US13028604申请日： 2011-02-16
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公开(公告)号： US08445912B2公开(公告)日： 2013-05-21
- 发明人: Iwao Yagi , Hideki Ono , Mari Sasaki
- 申请人： Iwao Yagi , Hideki Ono , Mari Sasaki
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Wolf, Greenfield & Sacks, P.C.
- 优先权： JP2010-037284 20100223
- 主分类号： H01L29/10
- IPC分类号： H01L29/10
摘要：
A high-performance thin film transistor structure which is easily manufactured is provided. The thin film transistor structure includes: a first electrode; second and third electrodes apart from each other in a hierarchical level different from that of the first electrode; first, second, and third wirings connected to the first, second, and third electrodes, respectively; a main stack body disposed so as to be opposed to the first electrode with an interlayer insulating layer in between, between the first electrode, and the second and third electrodes; and a sub stack body including an insulating layer and a semiconductor layer, disposed so as to be opposed to the first wiring with the interlayer insulating layer in between, between the first and second wirings in a position where the first and second wirings overlap and/or between the first and third wirings in a position where the first and third wirings overlap.
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