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    SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING MULTILAYER SEMICONDUCTOR THIN FILM
    5.
    发明申请
    SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING MULTILAYER SEMICONDUCTOR THIN FILM 有权
    半导体器件及其制造方法以及形成多层半导体薄膜的方法

    公开(公告)号：US20120025173A1

    公开(公告)日：2012-02-02

    申请号：US12848732

    申请日：2010-08-02

    申请人： Norihito Kobayashi ,  Mari Sasaki ,  Takahiro Ohe

    发明人： Norihito Kobayashi ,  Mari Sasaki ,  Takahiro Ohe

    IPC分类号： H01L51/10 ,  H01L51/40

    CPC分类号： H01L51/0062 ,  H01L51/0003 ,  H01L51/0073 ,  H01L51/0516 ,  H01L51/052 ,  H01L51/0558

    摘要： A method of manufacturing a semiconductor device including a gate electrode, a gate insulating layer, source/drain electrodes, and a channel-forming region that are disposed on a base is provided. The method includes the steps of forming a thin film by application of a mixed solution including a polymeric insulating material and a dioxaanthanthrene compound represented by structural formula (1) below; and subsequently drying the thin film to induce phase separation of the polymeric insulating material and the dioxaanthanthrene compound, thereby forming the gate insulating layer from the polymeric insulating material and the channel-forming region from the dioxaanthanthrene compound: wherein at least one of R3 and R9 represents a substituent other than hydrogen.

    摘要翻译： 提供一种制造半导体器件的方法，该半导体器件包括设置在基底上的栅电极，栅极绝缘层，源/漏电极和沟道形成区域。 该方法包括以下步骤：通过使用包含以下结构式（1）表示的聚合绝缘材料和二氧杂蒽化合物的混合溶液形成薄膜; 随后干燥该薄膜以诱发聚合物绝缘材料和二氧杂蒽化合物的相分离，由此从二氧杂蒽化合物的聚合物绝缘材料和沟道形成区形成栅极绝缘层：其中R3和R9中的至少一个 表示除氢以外的取代基。

    Thin film transistor structure, method of manufacturing the same, and electronic device
    9.
    发明授权
    Thin film transistor structure, method of manufacturing the same, and electronic device 有权
    薄膜晶体管结构，制造方法及电子器件

    公开(公告)号：US08445912B2

    公开(公告)日：2013-05-21

    申请号：US13028604

    申请日：2011-02-16

    申请人： Iwao Yagi ,  Hideki Ono ,  Mari Sasaki

    发明人： Iwao Yagi ,  Hideki Ono ,  Mari Sasaki

    IPC分类号： H01L29/10

    CPC分类号： H01L29/66742 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/283 ,  H01L29/7869

    摘要： A high-performance thin film transistor structure which is easily manufactured is provided. The thin film transistor structure includes: a first electrode; second and third electrodes apart from each other in a hierarchical level different from that of the first electrode; first, second, and third wirings connected to the first, second, and third electrodes, respectively; a main stack body disposed so as to be opposed to the first electrode with an interlayer insulating layer in between, between the first electrode, and the second and third electrodes; and a sub stack body including an insulating layer and a semiconductor layer, disposed so as to be opposed to the first wiring with the interlayer insulating layer in between, between the first and second wirings in a position where the first and second wirings overlap and/or between the first and third wirings in a position where the first and third wirings overlap.

    摘要翻译： 提供了容易制造的高性能薄膜晶体管结构。 薄膜晶体管结构包括：第一电极; 第二和第三电极以与第一电极的层级不同的层级彼此分开; 分别连接到第一，第二和第三电极的第一，第二和第三布线; 主堆叠体，设置成与第一电极相对，在第一电极和第二和第三电极之间具有层间绝缘层; 以及包括绝缘层和半导体层的子堆叠体，在第一和第二布线重叠的位置和/或第二布线之间，在第一布线和第二布线之间设置有与第一布线相对的第一布线和层间绝缘层， 或者在第一和第三布线重叠的位置之间的第一和第三布线之间。