公开(公告)号：US08445912B2

公开(公告)日：2013-05-21

申请号：US13028604

申请日：2011-02-16

申请人： Iwao Yagi ,  Hideki Ono ,  Mari Sasaki

发明人： Iwao Yagi ,  Hideki Ono ,  Mari Sasaki

IPC分类号： H01L29/10

CPC分类号： H01L29/66742 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/283 ,  H01L29/7869

摘要： A high-performance thin film transistor structure which is easily manufactured is provided. The thin film transistor structure includes: a first electrode; second and third electrodes apart from each other in a hierarchical level different from that of the first electrode; first, second, and third wirings connected to the first, second, and third electrodes, respectively; a main stack body disposed so as to be opposed to the first electrode with an interlayer insulating layer in between, between the first electrode, and the second and third electrodes; and a sub stack body including an insulating layer and a semiconductor layer, disposed so as to be opposed to the first wiring with the interlayer insulating layer in between, between the first and second wirings in a position where the first and second wirings overlap and/or between the first and third wirings in a position where the first and third wirings overlap.

摘要翻译： 提供了容易制造的高性能薄膜晶体管结构。 薄膜晶体管结构包括：第一电极; 第二和第三电极以与第一电极的层级不同的层级彼此分开; 分别连接到第一，第二和第三电极的第一，第二和第三布线; 主堆叠体，设置成与第一电极相对，在第一电极和第二和第三电极之间具有层间绝缘层; 以及包括绝缘层和半导体层的子堆叠体，在第一和第二布线重叠的位置和/或第二布线之间，在第一布线和第二布线之间设置有与第一布线相对的第一布线和层间绝缘层， 或者在第一和第三布线重叠的位置之间的第一和第三布线之间。

公开(公告)号：US08405073B2

公开(公告)日：2013-03-26

申请号：US13029383

申请日：2011-02-17

申请人： Hideki Ono ,  Akihiro Nomoto ,  Iwao Yagi

发明人： Hideki Ono ,  Akihiro Nomoto ,  Iwao Yagi

IPC分类号： H01L51/10

CPC分类号： H01L51/10

摘要： A thin film transistor capable of stably obtaining good performance is provided. The thin film transistor includes an organic semiconductor layer, and a protective layer and a source electrode and a drain electrode formed on the organic semiconductor layer. The protective layer is disposed at least in a region between the source electrode and the drain electrode.

摘要翻译： 提供能够稳定地获得良好性能的薄膜晶体管。 薄膜晶体管包括有机半导体层以及形成在有机半导体层上的保护层以及源电极和漏电极。 保护层至少设置在源电极和漏电极之间的区域中。

公开(公告)号：US20110215406A1

公开(公告)日：2011-09-08

申请号：US13029383

申请日：2011-02-17

申请人： Hideki Ono ,  Akihiro Nomoto ,  Iwao Yagi

发明人： Hideki Ono ,  Akihiro Nomoto ,  Iwao Yagi

IPC分类号： H01L51/10

CPC分类号： H01L51/10

摘要： A thin film transistor capable of stably obtaining good performance is provided. The thin film transistor includes an organic semiconductor layer, and a protective layer and a source electrode and a drain electrode formed on the organic semiconductor layer. The protective layer is disposed at least in a region between the source electrode and the drain electrode.

摘要翻译： 提供能够稳定地获得良好性能的薄膜晶体管。 薄膜晶体管包括有机半导体层以及形成在有机半导体层上的保护层以及源电极和漏电极。 保护层至少设置在源电极和漏极之间的区域中。

公开(公告)号：US20120034723A1

公开(公告)日：2012-02-09

申请号：US13276907

申请日：2011-10-19

申请人： Iwao Yagi

发明人： Iwao Yagi

IPC分类号： H01L33/08

CPC分类号： G02F1/133555 ,  G02F1/133305 ,  G02F1/133345 ,  G02F2001/136218 ,  H01L27/283

摘要： A method of forming a display device including source/drain electrodes on a substrate, a pixel electrode, an insulating partition wall layer, a channel-region semiconductor layer. The source/drain electrodes and the pixel electrode are formed on the substrate and in contact with each other. The insulating partition wall layer is formed on the substrate and provided with a first opening extending to between the source electrode and the drain electrode and a second opening formed on the pixel electrode and extending to the pixel electrode. The channel-region semiconductor layer is formed on the bottom of the first opening. The insulating film is formed on the partition wall layer so as to cover the first opening including the channel-region semiconductor layer. The oriented film covers the first opening from above the insulating film and the second opening from the pixel electrode.

摘要翻译： 一种在基板上形成包括源极/漏极的显示装置的方法，像素电极，绝缘分隔壁层，沟道区半导体层。 源极/漏极和像素电极形成在基板上并且彼此接触。 绝缘分隔壁层形成在基板上，并且设置有延伸到源电极和漏电极之间的第一开口和形成在像素电极上并延伸到像素电极的第二开口。 沟道区半导体层形成在第一开口的底部。 绝缘膜形成在隔壁层上以覆盖包括沟道区半导体层的第一开口。 取向膜从绝缘膜上方覆盖第一开口，从像素电极覆盖第二开口。

公开(公告)号：US20090309103A1

公开(公告)日：2009-12-17

申请号：US12485582

申请日：2009-06-16

申请人： Iwao Yagi

发明人： Iwao Yagi

IPC分类号： H01L29/786 ,  H01L33/00 ,  H01L21/336

CPC分类号： G02F1/133555 ,  G02F1/133305 ,  G02F1/133345 ,  G02F2001/136218 ,  H01L27/283

摘要： A display device includes source/drain electrodes on a substrate, a pixel electrode, an insulating partition wall layer, a channel-region semiconductor layer. The source/drain electrodes and the pixel electrode are formed on the substrate and in contact with each other. The insulating partition wall layer is formed on the substrate and provided with a first opening extending to between the source electrode and the drain electrode and a second opening formed on the pixel electrode and extending to the pixel electrode. The channel-region semiconductor layer is formed on the bottom of the first opening. The insulating film is formed on the partition wall layer so as to cover the first opening including the channel-region semiconductor layer. The oriented film covers the first opening from above the insulating film and the second opening from the pixel electrode.

摘要翻译： 显示装置包括在基板上的源/漏电极，像素电极，绝缘分隔壁层，沟道区半导体层。 源极/漏极和像素电极形成在基板上并且彼此接触。 绝缘分隔壁层形成在基板上，并且设置有延伸到源电极和漏电极之间的第一开口和形成在像素电极上并延伸到像素电极的第二开口。 沟道区半导体层形成在第一开口的底部。 绝缘膜形成在隔壁层上以覆盖包括沟道区半导体层的第一开口。 取向膜从绝缘膜上方覆盖第一开口，从像素电极覆盖第二开口。

公开(公告)号：US08629444B2

公开(公告)日：2014-01-14

申请号：US13556955

申请日：2012-07-24

申请人： Iwao Yagi

发明人： Iwao Yagi

IPC分类号： H01L29/04 ,  H01L31/20 ,  H01L31/036 ,  H01L31/0376

CPC分类号： H01L27/28

摘要： A circuit board includes: a first wiring layer provided on a substrate; an insulating layer including an opening, the insulating layer being provided on the first wiring layer; a surface-energy control layer provided in a region opposed to the opening of the insulating layer on the first wiring layer, the surface-energy control layer controlling surface energy of the first wiring layer; a semiconductor layer provided in a selective region on the insulating layer; and a second wiring layer on the insulating layer, the second wiring layer being electrically connected to the semiconductor layer, and being electrically connected to the first wiring layer through the opening.

摘要翻译： 电路板包括：设置在基板上的第一布线层; 包括开口的绝缘层，所述绝缘层设置在所述第一布线层上; 表面能控制层，设置在与所述第一布线层上的所述绝缘层的开口相对的区域中，所述表面能控制层控制所述第一布线层的表面能; 设置在所述绝缘层上的选择区域中的半导体层; 以及在所述绝缘层上的第二布线层，所述第二布线层电连接到所述半导体层，并且通过所述开口与所述第一布线层电连接。

公开(公告)号：US20130038581A1

公开(公告)日：2013-02-14

申请号：US13546719

申请日：2012-07-11

申请人： Iwao Yagi

发明人： Iwao Yagi

IPC分类号： G09G5/00 ,  G09G3/20 ,  H05K7/06

CPC分类号： H01L27/124 ,  G02F1/1345 ,  G02F1/13452 ,  G02F2201/42

摘要： A display device includes: a substrate including a display region and a peripheral region; a first wiring provided on a front face of the substrate; and a second wiring provided on a rear face of the substrate and electrically connected to the first wiring.

公开(公告)号：US20120288685A1

公开(公告)日：2012-11-15

申请号：US13460903

申请日：2012-05-01

申请人： Gen Yukawa ,  Iwao Yagi ,  Makoto Noda ,  Mao Katsuhara

发明人： Gen Yukawa ,  Iwao Yagi ,  Makoto Noda ,  Mao Katsuhara

IPC分类号： B32B3/08

摘要： A thin-film element assembly includes: a base having flexibility and a plurality of thin-film elements provided on a first surface of the base, wherein a second region where no thin-film element is provided is formed in the base in an outer side of a first region where a plurality of thin-film elements are provided, and wherein convex portions are formed in the second region of the first surface of the base, or the second region of a second surface, or the second region of each of the first and second surfaces.

摘要翻译： 薄膜元件组件包括：具有柔性的底座和设置在基座的第一表面上的多个薄膜元件，其中在基座中在外侧形成有不设置薄膜元件的第二区域 的第一区域，其中设置有多个薄膜元件，并且其中凸起部分形成在基底的第一表面的第二区域或第二表面的第二区域中，或者每个的第二区域 第一和第二表面。

公开(公告)号：US20080017400A1

公开(公告)日：2008-01-24

申请号：US11587129

申请日：2005-04-20

申请人： Hiroshi Yamamoto ,  Kunji Shigeto ,  Kazuhito Tsukagoshi ,  Iwao Yagi ,  Reizo Kato

发明人： Hiroshi Yamamoto ,  Kunji Shigeto ,  Kazuhito Tsukagoshi ,  Iwao Yagi ,  Reizo Kato

IPC分类号： H01B5/00 ,  C25D11/00 ,  C25D7/12

CPC分类号： H01L51/0508 ,  G01J1/42

摘要： Provided is an element which is formed of a conductor composed of a monocrystalline organic compound. Employed is an element including a pair of electrodes with a gap of 10 to 900 nm therebetween and a conductor composed of a monocrystalline organic compound disposed between the pair of electrodes.

摘要翻译： 提供由由单晶有机化合物构成的导体形成的元件。 使用包括间隔为10〜900nm的一对电极和由配置在该对电极之间的单晶有机化合物构成的导体的元件。

公开(公告)号：US08729531B2

公开(公告)日：2014-05-20

申请号：US13015972

申请日：2011-01-28

申请人： Iwao Yagi

发明人： Iwao Yagi

IPC分类号： H01L51/30

摘要： A thin-film transistor includes: an organic semiconductor layer; and a source electrode and a drain electrode spaced apart from each other and disposed to respectively overlap the organic semiconductor layer. The organic semiconductor layer INCLUDES: a lower organic semiconductor layer; and an upper organic semiconductor layer formed on the lower organic semiconductor layer and having solubility and conductivity higher than the lower organic semiconductor layer. The lower organic semiconductor layer extends from an area overlapping the source electrode to an area overlapping the drain electrode, while the upper organic semiconductor layer is disposed in each of the area overlapping the source electrode and the area overlapping the drain electrode so that the respective upper organic semiconductor layers are spaced apart from each other.

摘要翻译： 薄膜晶体管包括：有机半导体层; 以及彼此间隔开并且分别重叠有机半导体层的源电极和漏电极。 有机半导体层包括：下部有机半导体层; 以及形成在下部有机半导体层上并具有高于下部有机半导体层的溶解度和导电性的上部有机半导体层。 下部有机半导体层从与源电极重叠的区域延伸到与漏电极重叠的区域，而上部有机半导体层设置在与源电极重叠的区域和与漏电极重叠的区域中的每一个中， 有机半导体层彼此间隔开。