Thin film transistor structure, method of manufacturing the same, and electronic device
    1.
    发明授权
    Thin film transistor structure, method of manufacturing the same, and electronic device 有权
    薄膜晶体管结构,制造方法及电子器件

    公开(公告)号:US08445912B2

    公开(公告)日:2013-05-21

    申请号:US13028604

    申请日:2011-02-16

    IPC分类号: H01L29/10

    摘要: A high-performance thin film transistor structure which is easily manufactured is provided. The thin film transistor structure includes: a first electrode; second and third electrodes apart from each other in a hierarchical level different from that of the first electrode; first, second, and third wirings connected to the first, second, and third electrodes, respectively; a main stack body disposed so as to be opposed to the first electrode with an interlayer insulating layer in between, between the first electrode, and the second and third electrodes; and a sub stack body including an insulating layer and a semiconductor layer, disposed so as to be opposed to the first wiring with the interlayer insulating layer in between, between the first and second wirings in a position where the first and second wirings overlap and/or between the first and third wirings in a position where the first and third wirings overlap.

    摘要翻译: 提供了容易制造的高性能薄膜晶体管结构。 薄膜晶体管结构包括:第一电极; 第二和第三电极以与第一电极的层级不同的层级彼此分开; 分别连接到第一,第二和第三电极的第一,第二和第三布线; 主堆叠体,设置成与第一电极相对,在第一电极和第二和第三电极之间具有层间绝缘层; 以及包括绝缘层和半导体层的子堆叠体,在第一和第二布线重叠的位置和/或第二布线之间,在第一布线和第二布线之间设置有与第一布线相对的第一布线和层间绝缘层, 或者在第一和第三布线重叠的位置之间的第一和第三布线之间。

    Organic thin film transistor with a protective layer between source and drain electrodes and electronic device
    2.
    发明授权
    Organic thin film transistor with a protective layer between source and drain electrodes and electronic device 有权
    有机薄膜晶体管,在源极和漏极之间具有保护层和电子器件

    公开(公告)号:US08405073B2

    公开(公告)日:2013-03-26

    申请号:US13029383

    申请日:2011-02-17

    IPC分类号: H01L51/10

    CPC分类号: H01L51/10

    摘要: A thin film transistor capable of stably obtaining good performance is provided. The thin film transistor includes an organic semiconductor layer, and a protective layer and a source electrode and a drain electrode formed on the organic semiconductor layer. The protective layer is disposed at least in a region between the source electrode and the drain electrode.

    摘要翻译: 提供能够稳定地获得良好性能的薄膜晶体管。 薄膜晶体管包括有机半导体层以及形成在有机半导体层上的保护层以及源电极和漏电极。 保护层至少设置在源电极和漏电极之间的区域中。

    THIN FILM TRANSISTOR AND ELECTRONIC DEVICE
    3.
    发明申请
    THIN FILM TRANSISTOR AND ELECTRONIC DEVICE 有权
    薄膜晶体管和电子器件

    公开(公告)号:US20110215406A1

    公开(公告)日:2011-09-08

    申请号:US13029383

    申请日:2011-02-17

    IPC分类号: H01L51/10

    CPC分类号: H01L51/10

    摘要: A thin film transistor capable of stably obtaining good performance is provided. The thin film transistor includes an organic semiconductor layer, and a protective layer and a source electrode and a drain electrode formed on the organic semiconductor layer. The protective layer is disposed at least in a region between the source electrode and the drain electrode.

    摘要翻译: 提供能够稳定地获得良好性能的薄膜晶体管。 薄膜晶体管包括有机半导体层以及形成在有机半导体层上的保护层以及源电极和漏电极。 保护层至少设置在源电极和漏极之间的区域中。

    Steam turbine stator vane and steam turbine using the same
    4.
    发明授权
    Steam turbine stator vane and steam turbine using the same 有权
    蒸汽轮机定子叶片和蒸汽轮机使用相同

    公开(公告)号:US09011084B2

    公开(公告)日:2015-04-21

    申请号:US13231860

    申请日:2011-09-13

    IPC分类号: F01D9/02 F01D5/14

    摘要: Suppressing profile loss of a moving blade due to radial flow without an increase in the length of a shaft of a turbine is disclosed. The degree of reaction on an inner circumferential side is set to an appropriate degree, reducing profile loss due to supersonic inflow, and improving turbine efficiency. A steam turbine stator vane has a trailing edge with a curved line when the stator vane is viewed from a downstream side in the axial direction. The curved line has an inflection point located on an outer circumferential side with respect to the center of the stator vane in the height direction of the stator vane. An inner circumferential portion of the curved line is located on the inner circumferential side with respect to the inflection point. An outer circumferential portion of the curved line is located on the outer circumferential side with respect to the inflection point.

    摘要翻译: 公开了由于径向流动而不增加涡轮轴的长度而增加动叶片的轮廓损失。 将内周侧的反应度设定在适当的程度,减少由于超音速流入造成的轮廓损失,提高涡轮效率。 当从轴向的下游侧观察定子叶片时,汽轮机定子叶片具有带有曲线的后缘。 曲线具有相对于定子叶片的中心在定子叶片的高度方向上的外周侧上的拐点。 曲线的内周部相对于拐点位于内周侧。 曲线的外周部相对于拐点位于外周侧。

    Method for manufacturing a regenerated Fischer-Tropsch synthesis catalyst, and hydrocarbon manufacturing method
    7.
    发明授权
    Method for manufacturing a regenerated Fischer-Tropsch synthesis catalyst, and hydrocarbon manufacturing method 有权
    再生费 - 托合成催化剂的制造方法以及烃制造方法

    公开(公告)号:US08557725B2

    公开(公告)日:2013-10-15

    申请号:US13581948

    申请日:2011-02-14

    IPC分类号: B01J20/34 C07C27/00

    摘要: A method for producing a regenerated Fischer-Tropsch synthesis catalyst obtained by regenerating a spent catalyst used in a Fischer-Tropsch synthesis reaction, comprising a steaming step of bringing the above spent catalyst into contact with a mixed gas comprising 1 to 30% by volume of steam and an inert gas at a pressure of atmospheric pressure to 5 MPa and a temperature of 150 to 350° C., the above spent catalyst being a spent catalyst in which cobalt and/or ruthenium is supported on a carrier comprising silica with an average pore diameter measured by a nitrogen adsorption method of 4 to 25 nm, and of which activity represented by an initial carbon monoxide conversion is 40 to 95%, based on the activity of a corresponding unused catalyst.

    摘要翻译: 一种生产通过再生费 - 托合成反应中使用的废催化剂而获得的再生费 - 托合成催化剂的方法,包括使上述废催化剂与含有1〜30体积% 蒸汽和惰性气体,在大气压至5MPa的压力和150至350℃的温度下,上述废催化剂是废催化剂,其中钴和/或钌负载在包含二氧化硅的载体上,平均 基于相应的未使用的催化剂的活性,通过4〜25nm的氮吸附法测定的孔径,其初始一氧化碳转化率表示的活性为40〜95%。

    Reradiation apparatus for terrestrial digital broadcasting and method for reradiating terrestrial digital broadcasting
    8.
    发明授权
    Reradiation apparatus for terrestrial digital broadcasting and method for reradiating terrestrial digital broadcasting 有权
    用于地面数字广播的再现装置和用于再辐射地面数字广播的方法

    公开(公告)号:US08081708B2

    公开(公告)日:2011-12-20

    申请号:US12258655

    申请日:2008-10-27

    IPC分类号: H04L27/00

    CPC分类号: H04B7/0817

    摘要: A reradiation apparatus for terrestrial digital broadcasting includes plural antennas provided on a train and mutually spaced along the running direction of the train, plural receiving processing parts provided corresponding to the antennas, a master selecting part which sets the receiving processing part corresponding to the antenna provided at the rear of the train as a master receiving processing part, a monitoring part which monitors a received state of the terrestrial digital broadcasting signal received by the master receiving processing part and outputs a supervisory signal, a switching part, and a reradiation unit. The switching part chooses the terrestrial digital broadcasting signal received by the master receiving processing part or the terrestrial digital broadcasting signal received by another receiving processing part based on the supervisory signal output by the monitoring part. The reradiation unit reradiates the chosen terrestrial digital broadcasting signal in the train.

    摘要翻译: 一种用于地面数字广播的再发射装置,包括:列车上设置的多个天线,沿着列车的行驶方向相互间隔开的多个天线,与天线相对应的多个接收处理部,设置与所设置的天线相对应的接收处理部的主选择部 在作为主接收处理部分的列车的后部,监视部分监视由主接收处理部分接收到的地面数字广播信号的接收状态,并输出监控信号,切换部分和重新放射单元。 开关部根据由监视部输出的监视信号,选择由主接收处理部接收的地面数字广播信号或由其他接收处理部接收的地面数字广播信号。 雷达单元重新辐射列车中所选择的地面数字广播信号。