发明授权
- 专利标题： Semiconductor nonvolatile memory device
- 专利标题（中）： 半导体非易失性存储器件
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申请号： US13269425申请日： 2011-10-07
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公开(公告)号： US08472258B2公开(公告)日： 2013-06-25
- 发明人: Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
- 申请人： Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
- 申请人地址： JP Kawasaki-shi
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kawasaki-shi
- 代理机构： Miles & Stockbridge P.C.
- 优先权： JP2004-157209 20040527; JP2005-062063 20050307
- 主分类号： G11C11/34
- IPC分类号： G11C11/34 ; G11C16/04 ; G11C16/06
摘要：
An operation scheme for operating stably a semiconductor nonvolatile memory device is provided.When hot-hole injection is conducted in the semiconductor nonvolatile memory device of a split gate structure, the hot-hole injection is verified using a crossing point that does not change with time. Thus, an erased state can be verified without being aware of any time-varying changes.Also, programming or programming/erasure is conducted by repeating pulse voltage or multi-step voltage application to a gate section multiple times.
公开/授权文献
- US20120026798A1 SEMICONDUCTOR NONVOLATILE MEMORY DEVICE 公开/授权日：2012-02-02
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